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What is 74HCT1G04GW?

This electronic component, produced by the manufacturer "NXP Semiconductors", performs the same function as "Inverter".


74HCT1G04GW Datasheet PDF - NXP Semiconductors

Part Number 74HCT1G04GW
Description Inverter
Manufacturers NXP Semiconductors 
Logo NXP Semiconductors Logo 


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74HC1G04; 74HCT1G04
Inverter
Rev. 5 — 25 September 2013
Product data sheet
1. General description
The 74HC1G04; 74HCT1G04 is a single inverter. Inputs include clamp diodes that enable
the use of current limiting resistors to interface inputs to voltages in excess of VCC.
2. Features and benefits
Wide supply voltage range from 2.0 V to 6.0 V
Input levels:
For 74HC1G04: CMOS level
For 74HCT1G04: TTL level
Symmetrical output impedance
High noise immunity
Low power dissipation
Balanced propagation delays
ESD protection:
HBM JESD22-A114E exceeds 2000 V
MM JESD22-A115-A exceeds 200 V
Multiple package options
Specified from 40 C to +85 C and 40 C to +125 C
3. Ordering information
Table 1. Ordering information
Type number Package
Temperature range Name
74HC1G04GW 40 C to +125 C TSSOP5
74HCT1G04GW
74HC1G04GV 40 C to +125 C SC-74A
74HCT1G04GV
Description
plastic thin shrink small outline package; 5 leads;
body width 1.25 mm
plastic surface-mounted package; 5 leads
Version
SOT353-1
SOT753

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74HCT1G04GW equivalent
NXP Semiconductors
74HC1G04; 74HCT1G04
Inverter
Table 7. Static characteristics …continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at Tamb = 25 C.
Symbol Parameter
Conditions
40 C to +85 C
40 C to +125 C
Min Typ Max Min
Max
ICC
ICC
CI
supply current
additional supply
current
input capacitance
VI = VCC or GND; IO = 0 A;
VCC = 5.5 V
- - 10
per input; VCC = 4.5 V to 5.5 V;
VI = VCC 2.1 V; IO = 0 A
-
- 500
- 1.5 -
-
-
-
20
850
-
Unit
A
A
pF
11. Dynamic characteristics
Table 8. Dynamic characteristics
GND = 0 V; tr = tf 6.0 ns; All typical values are measured at Tamb = 25 C. For test circuit, see Figure 6
Symbol Parameter
Conditions
40 C to +85 C
40 C to +125 C Unit
Min Typ Max Min
Max
For type 74HC1G04
tpd propagation delay A to Y; see Figure 5
VCC = 2.0 V; CL = 50 pF
VCC = 4.5 V; CL = 50 pF
VCC = 5.0 V; CL = 15 pF
VCC = 6.0 V; CL = 50 pF
CPD power dissipation VI = GND to VCC
capacitance
[1]
-
-
-
-
[2] -
25 105
9 21
7-
8 18
16 -
-
-
-
-
-
135 ns
27 ns
- ns
23 ns
- pF
For type 74HCT1G04
tpd propagation delay A to Y; see Figure 5
VCC = 4.5 V; CL = 50 pF
VCC = 5.0 V; CL = 15 pF
CPD power dissipation VI = GND to VCC 1.5 V
capacitance
[1]
-
-
[2] -
10 24
8-
18 -
-
-
-
27 ns
- ns
- pF
[1] tpd is the same as tPLH and tPHL.
[2] CPD is used to determine the dynamic power dissipation PD (W).
PD = CPD VCC2 fi + (CL VCC2 fo) where:
fi = input frequency in MHz
fo = output frequency in MHz
CL = output load capacitance in pF
VCC = supply voltage in Volts
(CL VCC2 fo) = sum of outputs
74HC_HCT1G04
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 25 September 2013
© NXP B.V. 2013. All rights reserved.
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