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2SD2649 PDF Datasheet - NPN Triple Diffused Planar Silicon Transistor - Sanyo Semicon Device

Part Number 2SD2649
Description NPN Triple Diffused Planar Silicon Transistor
Manufacturers Sanyo Semicon Device 
Logo Sanyo Semicon Device Logo 
Preview
Preview ( 4 pages )
		
2SD2649 datasheet, circuit
Ordering number : ENN6679A
2SD2649
NPN Triple Diffused Planar Silicon Transistor
2SD2649
Color TV Horizontal Deflection
Output Applications
Features
High speed.
High breakdown voltage(VCBO=1500V).
High reliability(Adoption of HVP process).
Adoption of MBIT process.
Package Dimensions
unit : mm
2174A
[2SD2649]
16.0 3.4
5.6
3.1
2.8
2.0 2.1
0.7 0.9
12 3
5.45
1 : Base
2 : Collector
3 : Emitter
Specifications
Absolute Maximum Ratings at Ta=25°C
5.45
SANYO : TO-3PMLH
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta=25°C
Tc=25°C
Conditions
Ratings
1500
700
5
6
15
3.0
60
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Parameter
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Symbol
Conditions
ICBO
ICES
VCEO(sus)
IEBO
VCE=800V, IE=0
VCE=1500V, RBE=0
IC=100mA, IB=0
VEB=4V, IC=0
min
700
Ratings
typ
max
Unit
10 µA
1.0 mA
V
1 mA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52101 TS IM TA-3147 / O1000 TS IM TA-3047 No.6679-1/4

1 page

2SD2649 pdf, schematic
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
DC Current Gain
Fall Time
2SD2649
Symbol
VCE(sat)
VBE(sat)
hFE1
hFE2
tf
Conditions
IC=3.15A, IB=0.63A
IC=3.15A, IB=0.63A
VCE=5V, IC=0.5A
VCE=5V, IC=3.5A
IC=2A, IB1=0.4A, IB2=--0.8A
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
VR
IB1
IB2
RB
50
+
100µF
VBE= --2V
OUTPUT
RL
100
+
470µF
VCC=200V
Ratings
min typ
10
5
max
3
1.5
8
0.3
Unit
V
V
µs
6
2.0A
5
4
3
2
IC -- VCE
1.6A
1.8A
1.4A
1.2A
1.0A
0.8A
0.6A
0.4A
0.2A
0.05A
1
0 IB=0
0 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE -- V IT02632
hFE -- IC
100
7
5
Ta=120°C
VCE=5V
25°C
3
2 --40°C
10
7
5
3
2
1.0
0.1
23
5 7 1.0
23
Collector Current, IC -- A
5 7 10
IT02634
IC -- VBE
7
VCE=5V
6
5
4
3
2
1
0
0
5
3
2
1.0
7
5
3
2
0.1
7
5
3
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE -- V IT02633
VCE(sat) -- IC
IC / IB=5
Ta= --120°C
23
5 7 1.0
23
Collector Current, IC -- A
5 7 10
IT02635
No.6679-2/4

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