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2SD2649 Datasheet PDF


2SD2649 - Sanyo Semicon Device

Part Number 2SD2649
Description NPN Triple Diffused Planar Silicon Transistor
Manufacturers Sanyo Semicon Device 
Logo Sanyo Semicon Device Logo 
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2SD2649 datasheet
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2SD2649 pdf, equivalent, schematic
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
DC Current Gain
Fall Time
2SD2649
Symbol
VCE(sat)
VBE(sat)
hFE1
hFE2
tf
Conditions
IC=3.15A, IB=0.63A
IC=3.15A, IB=0.63A
VCE=5V, IC=0.5A
VCE=5V, IC=3.5A
IC=2A, IB1=0.4A, IB2=--0.8A
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
VR
IB1
IB2
RB
50
+
100µF
VBE= --2V
OUTPUT
RL
100
+
470µF
VCC=200V
Ratings
min typ
10
5
max
3
1.5
8
0.3
Unit
V
V
µs
6
2.0A
5
4
3
2
IC -- VCE
1.6A
1.8A
1.4A
1.2A
1.0A
0.8A
0.6A
0.4A
0.2A
0.05A
1
0 IB=0
0 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE -- V IT02632
hFE -- IC
100
7
5
Ta=120°C
VCE=5V
25°C
3
2 --40°C
10
7
5
3
2
1.0
0.1
23
5 7 1.0
23
Collector Current, IC -- A
5 7 10
IT02634
IC -- VBE
7
VCE=5V
6
5
4
3
2
1
0
0
5
3
2
1.0
7
5
3
2
0.1
7
5
3
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE -- V IT02633
VCE(sat) -- IC
IC / IB=5
Ta= --120°C
23
5 7 1.0
23
Collector Current, IC -- A
5 7 10
IT02635
No.6679-2/4
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