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2SC5840 PDF Datasheet - Silicon NPN epitaxial planar type Power Transistors - Panasonic Semiconductor

Part Number 2SC5840
Description Silicon NPN epitaxial planar type Power Transistors
Manufacturers Panasonic Semiconductor 
Logo Panasonic Semiconductor Logo 
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2SC5840 datasheet, circuit
Power Transistors
2SC5840
Silicon NPN epitaxial planar type
Power supply for Audio & Visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
Features
High-speed switching (tstg: storage time/tf: fall time is short)
Low collector-emitter saturation voltage VCE(sat)
Superior forward current transfer ratio hFE linearity
TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
TC = 25°C
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
80
80
5
3
5
15
2
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Marking Symbol: C5840
Internal Connection
C
B
E
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VCEO
ICBO
ICEO
hFE1
hFE2
hFE3
VCE(sat)
fT
ton
tstg
tf
IC = 10 mA, IB = 0
VCB = 80 V, IE = 0
VCE = 80 V, IB = 0
VCE = 4 V, IC = 0.2 A
VCE = 4 V, IC = 1 A
VCE = 4 V, IC = 3 A
IC = 3 A, IB = 0.375 A
VCE = 10 V, IC = 0.1 A, f = 10 MHz
IC = 1 A, Resistance loaded
IB1 = 0.1 A, IB2 = − 0.1 A
VCC = 50 V
80 V
100 µA
100 µA
50
80 280
20
0.7 V
100 MHz
0.2 µs
0.9 µs
0.15 µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2002
SJD00297AED
1

1 page

2SC5840 pdf, schematic
2SC5840
PC Ta
35
(1) TC = Ta
(2) Without heat sink
30
25
20
(1)
15
10
5
(2)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
Safe operation area
100
Non repetitive pulse
TC = 25˚C
10
ICP
IC
1 10 ms
t = 1 ms
0.1
t=1s
0.01
1
10 100 1 000
Collector-emitter voltage VCE (V)
Rth t
1 000 (1) Without heat sink
(2) With a 100 × 100 × 2 mm AL heat sink
100
10
Ta = 25°C
(1)
(2)
1
0.1
0.001
0.01
0.1 1 10
Time t (s)
100 1 000
2 SJD00297AED

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Information Total 3 Pages
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