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2SC6050 PDF Datasheet - Silicon NPN epitaxial planar type - Panasonic

Part Number 2SC6050
Description Silicon NPN epitaxial planar type
Manufacturers Panasonic 
Logo Panasonic Logo 
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2SC6050 datasheet, circuit
Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC6050
Silicon NPN epitaxial planar type
For high frequency amplification, oscillation and mixing
Features
High transition frequency fT
Small collector output capacitance (Common base, input open circuited) Cob
and reverse transfer capacitance (Common base) Crb
Optimum for high-density mounting and downsizing of the equipment for
Ultraminiature leadless package
0.6 mm × 1.0 mm (height 0.39 mm)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
VCBO
VCEO
Emitter-base voltage (Collector open)
VEBO
Collector current
Collector power dissipation
Junction temperature
Storage temperature
IC
PC
Tj
Tstg
Rating
15
10
3
50
100
125
55 to +125
Unit
V
V
V
mA
mW
°C
°C
Unit: mm
32
1.00±0.05
1
0.39+00..0031
0.25±0.05
0.25±0.05
1
32
0.65±0.01
0.05±0.03
1: Base
2: Emitter
3: Collector
Marking Symbol: 6N
ML3-N2 Package
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
VCEO
VEBO
ICBO
hFE
VCE(sat)
IC = 2 mA, IB = 0
IE = 10 µA, IC = 0
VCB = 10 V, IE = 0
VCE = 4 V, IC = 5 mA
IC = 20 mA, IB = 4 mA
10
3
1
75 400
0.5
Transition frequency
fT VCB = 4 V, IE = 5 mA, f = 200 MHz
1.4 1.9 2.7
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 4 V, IE = 0, f = 1 MHz
1.4
Reverse transfer capacitance (Common base)
Collector-base parameter
hFE ratio
Crb
rbb' cc
hFE
VCB = 4 V, IE = 0, f = 1 MHz
VCB = 4 V, IE = 5 mA, f = 31.9 MHz
VCE = 4 V, IC = 100 µA / VCE = 4 V, IC =
5 mA
0.75
0.45
11
1.6
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Unit
V
V
µA
V
GHz
pF
pF
ps
Publication date: May 2005
SJC00335AED
1

1 page

2SC6050 pdf, schematic
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.

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