|
|
PDF STI24N60M2 Data sheet ( Hoja de datos )
| Número de pieza | STI24N60M2 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de STI24N60M2 (archivo pdf) en la parte inferior de esta página. Total 21 Páginas | ||
|
No Preview Available !
STB24N60M2, STI24N60M2,
STP24N60M2, STW24N60M2
N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg
22
Power MOSFET in D PAK, I PAK, TO-220 and TO-247 packages
Datasheet − production data
TAB
2
3
1
D2PAK
TAB
TAB
123
I2PAK
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
D(2, TAB)
Features
Order codes VDS @ TJmax RDS(on) max ID
STB24N60M2
STI24N60M2
STP24N60M2
STW24N60M2
650 V
0.19 Ω 18 A
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
G(1)
S(3)
AM01476v1
Description
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STB24N60M2
STI24N60M2
STP24N60M2
STW24N60M2
Table 1. Device summary
Marking
Package
24N60M2
2
D PAK
2
I PAK
TO-220
TO-247
Packaging
Tape and reel
Tube
February 2014
This is information on a product in full production.
DocID023964 Rev 5
1/21
www.st.com
21
1 page  
STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2
Electrical characteristics
Symbol
Table 8. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
(1)
ISDM
(2)
VSD
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 18 A, VGS = 0
-
-
-
18 A
72 A
1.6 V
trr Reverse recovery time
- 332
Qrr Reverse recovery charge
ISD = 18 A, di/dt = 100 A/μs
VDD = 60 V (see Figure 18)
-
4
IRRM Reverse recovery current
- 24
ns
μC
A
trr Reverse recovery time
- 450
ISD = 18 A, di/dt = 100 A/μs
Qrr
IRRM
Reverse recovery charge
Reverse recovery current
VDD = 60 V, Tj = 150 °C
(see Figure 18)
- 5.5
- 25
ns
μC
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
DocID023964 Rev 5
5/21
5 Page 
STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2
Package mechanical data
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
e1
H
J1
L
L1
L2
R
V2
Table 9. D²PAK (TO-263) mechanical data
mm
Min.
Typ.
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
8.50
2.54
4.88
15
2.49
2.29
1.27
1.30
0.4
0°
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
10.40
5.28
15.85
2.69
2.79
1.40
1.75
8°
DocID023964 Rev 5
11/21
11 Page | ||
| Páginas | Total 21 Páginas | |
| PDF Descargar | [ Datasheet STI24N60M2.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STI24N60M2 | N-CHANNEL POWER MOSFET | STMicroelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |