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What is STB24N60M2?

This electronic component, produced by the manufacturer "STMicroelectronics", performs the same function as "N-CHANNEL POWER MOSFET".


STB24N60M2 Datasheet PDF - STMicroelectronics

Part Number STB24N60M2
Description N-CHANNEL POWER MOSFET
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 


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STB24N60M2, STI24N60M2,
STP24N60M2, STW24N60M2
N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg
22
Power MOSFET in D PAK, I PAK, TO-220 and TO-247 packages
Datasheet production data
TAB
2
3
1
D2PAK
TAB
TAB
123
I2PAK
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
D(2, TAB)
Features
Order codes VDS @ TJmax RDS(on) max ID
STB24N60M2
STI24N60M2
STP24N60M2
STW24N60M2
650 V
0.19 Ω 18 A
Extremely low gate charge
Lower RDS(on) x area vs previous generation
Low gate input resistance
100% avalanche tested
Zener-protected
Applications
Switching applications
G(1)
S(3)
AM01476v1
Description
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STB24N60M2
STI24N60M2
STP24N60M2
STW24N60M2
Table 1. Device summary
Marking
Package
24N60M2
2
D PAK
2
I PAK
TO-220
TO-247
Packaging
Tape and reel
Tube
February 2014
This is information on a product in full production.
DocID023964 Rev 5
1/21
www.st.com
21

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STB24N60M2 equivalent
STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2
Electrical characteristics
Symbol
Table 8. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
(1)
ISDM
(2)
VSD
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 18 A, VGS = 0
-
-
-
18 A
72 A
1.6 V
trr Reverse recovery time
- 332
Qrr Reverse recovery charge
ISD = 18 A, di/dt = 100 A/μs
VDD = 60 V (see Figure 18)
-
4
IRRM Reverse recovery current
- 24
ns
μC
A
trr Reverse recovery time
- 450
ISD = 18 A, di/dt = 100 A/μs
Qrr
IRRM
Reverse recovery charge
Reverse recovery current
VDD = 60 V, Tj = 150 °C
(see Figure 18)
- 5.5
- 25
ns
μC
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
DocID023964 Rev 5
5/21


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Featured Datasheets

Part NumberDescriptionMFRS
STB24N60M2The function is N-CHANNEL POWER MOSFET. STMicroelectronicsSTMicroelectronics

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