STB24N60M2 Datasheet PDF - STMicroelectronics
Part Number | STB24N60M2 | |
Description | N-CHANNEL POWER MOSFET | |
Manufacturers | STMicroelectronics | |
Logo | ||
There is a preview and STB24N60M2 download ( pdf file ) link at the bottom of this page. Total 21 Pages |
Preview 1 page No Preview Available ! STB24N60M2, STI24N60M2,
STP24N60M2, STW24N60M2
N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg
22
Power MOSFET in D PAK, I PAK, TO-220 and TO-247 packages
Datasheet − production data
TAB
2
3
1
D2PAK
TAB
TAB
123
I2PAK
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
D(2, TAB)
Features
Order codes VDS @ TJmax RDS(on) max ID
STB24N60M2
STI24N60M2
STP24N60M2
STW24N60M2
650 V
0.19 Ω 18 A
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
G(1)
S(3)
AM01476v1
Description
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STB24N60M2
STI24N60M2
STP24N60M2
STW24N60M2
Table 1. Device summary
Marking
Package
24N60M2
2
D PAK
2
I PAK
TO-220
TO-247
Packaging
Tape and reel
Tube
February 2014
This is information on a product in full production.
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STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2
Electrical characteristics
Symbol
Table 8. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
(1)
ISDM
(2)
VSD
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 18 A, VGS = 0
-
-
-
18 A
72 A
1.6 V
trr Reverse recovery time
- 332
Qrr Reverse recovery charge
ISD = 18 A, di/dt = 100 A/μs
VDD = 60 V (see Figure 18)
-
4
IRRM Reverse recovery current
- 24
ns
μC
A
trr Reverse recovery time
- 450
ISD = 18 A, di/dt = 100 A/μs
Qrr
IRRM
Reverse recovery charge
Reverse recovery current
VDD = 60 V, Tj = 150 °C
(see Figure 18)
- 5.5
- 25
ns
μC
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for STB24N60M2 electronic component. |
Information | Total 21 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ STB24N60M2.PDF Datasheet ] |
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