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PDF IRLR120NPBF Data sheet ( Hoja de datos )
| Número de pieza | IRLR120NPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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IRLR120NPbF
IRLU120NPbF
l Surface Mount (IRLR120N)
l Straight Lead (IRLU120N)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve the lowest possible
on-resistance per silicon area. This benefit, combined with the
fast switching speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer with
an extremely efficient device for use in a wide variety of
applications.
The D-PAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight lead
version (IRFU series) is for through-hole mounting applications.
Power dissipation levels up to 1.5 watts are possible in typical
surface mount applications.
G
D
HEXFET® Power MOSFET
D
VDSS = 100V
RDS(on) = 0.185Ω
S ID = 10A
S
G
D-Pak
IRLR120NPbF
S
D
G
I-Pak
IRLU120NPbF
Base Part Number
IRLR120NPbF
Package Type
D-Pak
Standard Pack
Form
Quantity
Tube
75
Tape and Reel
2000
Tape and Reel Left
3000
Tape and Reel Right
IRLU120NPbF
IPak
Absolute Maximum Ratings
Tube
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
3000
75
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
Orderable Part Number
Note
IRLR120NPbF
IRLR120NTRPbF
IRLR120NTRLPbF
IRLR120NTRRPbF
IRLU120NPbF
EOL notice # 289
Max.
10
7.0
35
48
0.32
± 16
85
6.0
4.8
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Typ.
–––
–––
–––
Max.
3.1
50
110
Units
°C/W
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
July 9, 2014
1 page  
IRLR/U120NPbF
10
8
6
4
2
0A
25 50 75 100 125 150 175
TC, Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
VDS
VGS
RG
RD
D.U.T.
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
1
0.20
0.10
0.05
0.02
0.1 0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
July 9, 2014
5 Page 
IRLR/U120NPbF
Qualification information†
Qualification level
Moisture Sensitivity Level
RoHS compliant
I ndus tr ial
(per JEDE C JE S D47F †† guidelines)
D-Pak
I-Pak
MS L1
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
Revision History
Date
Comment
• Updated Electrical parameter table typo on Rdson units from "W" to "Ω" on page2.
• Updated Package outline on page 8 & page 9.
7/9/2014
• Added Orderable table on page1.
• Updated datasheet with IR corporate template.
• Updated ordering information to reflect the End-Of-life (EOL notice #289)
• Added Qualification table on page10.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
11 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
July 9, 2014
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IRLR120NPBF.PDF ] | |
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