FDD14AN06LA0_F085 Datasheet PDF - Fairchild Semiconductor
Part Number | FDD14AN06LA0_F085 | |
Description | N-Channel PowerTrench MOSFET | |
Manufacturers | Fairchild Semiconductor | |
Logo | ||
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N-Channel PowerTrench® MOSFET
60V, 50A, 14.6mΩ
Features
• rDS(ON) = 12.8mΩ (Typ.), VGS = 5V, ID = 50A
• Qg(tot) = 25nC (Typ.), VGS = 5V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
• RoHS Compliant
December 2010
Applications
• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems
Formerly developmental type 83557
DRAIN
(FLANGE)
GATE
SOURCE
G
TO-252AA
FDD SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC < 100oC, VGS = 10V)
Continuous (TC < 80oC, VGS = 5V)
Continuous (Tamb = 25oC, VGS = 5V, with RθJA = 52oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
Maximum Thermal Resistance Junction to Case TO-252
Maximum Thermal Resistance Junction to Ambient TO-252, 1in2
copper pad area
D
S
Ratings
60
±20
50
50
9.5
Figure 4
55
125
0.83
-55 to 175
1.2
52
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2010 Fairchild Semiconductor Corporation
FDD14AN06LA0_F085 Rev. C
|
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Typical Characteristics TC = 25°C unless otherwise noted
1.4 1.2
VGS = VDS, ID = 250µA
ID = 250µA
1.2
1.1
1.0
0.8
1.0
0.6
0.4
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
0.9
-80
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
5000
1000
CRSS = CGD
CISS = CGS + CGD
COSS ≅ CDS + CGD
10
VDD = 30V
8
6
4
100
VGS = 0V, f = 1MHz
50
0.1 1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
60
Figure 13. Capacitance vs Drain to Source
Voltage
2
0
0
WAVEFORMS IN
DESCENDING ORDER:
ID = 50A
ID = 10A
10 20 30 40
Qg, GATE CHARGE (nC)
50
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
©2010 Fairchild Semiconductor Corporation
FDD14AN06LA0_F085 Rev. C
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