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PDF LMBTA93LT1G Data sheet ( Hoja de datos )
| Número de pieza | LMBTA93LT1G | |
| Descripción | High Voltage Transistor | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
High Voltage Transistor
PNP Silicon
FEATURE
ƽHigh voltage.
ƽFor Telephony or Professional communication equipment applications.
ƽWe declare that the material of product compliance with RoHS requirements.
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
(S-)LMBTA92LT1G
2D
3000/Tape&Reel
(S-)LMBTA92LT3G
2D
10000/Tape&Reel
(S-)LMBTA93LT1G
2E
3000/Tape&Reel
(S-)LMBTA93LT3G
2E
10000/Tape&Reel
LMBTA92LT1G
LMBTA93LT1G
S-LMBTA92LT1G
S-LMBTA93LT1G
3
1
2
SOT–23
MAXIMUM RATINGS
Rating
Value
Symbol LMBTA92 LMBTA93 Unit
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
–300 –200 Vdc
–300 –200 Vdc
–5.0 Vdc
–500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max
225
1.8
556
300
2.4
417
–55 to +150
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
1
BASE
3
COLLECTOR
2
EMITTER
Rev.A 1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet LMBTA93LT1G.PDF ] | |
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