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What is L2SD2114KVLT1G?

This electronic component, produced by the manufacturer "Leshan Radio Company", performs the same function as "Epitaxial planar type NPN silicon transistor".


L2SD2114KVLT1G Datasheet PDF - Leshan Radio Company

Part Number L2SD2114KVLT1G
Description Epitaxial planar type NPN silicon transistor
Manufacturers Leshan Radio Company 
Logo Leshan Radio Company Logo 


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No Preview Available ! L2SD2114KVLT1G datasheet, circuit

LESHAN RADIO COMPANY, LTD.
Epitaxial planar type
NPN silicon transistor
zFeatures
1) High DC current gain.
hFE = 1200 (Typ.)
2) High emitter-base voltage.
VEBO =12V (Min.)
www.DataSheet4U.com3) Low VCE (sat).
VCE (sat) = 0.18V (Typ.)
(IC / IB = 500mA / 20mA)
4) Pb-Free package is available.
L2SD2114K*LT1
3
1
2
SOT– 23 (TO–236AB)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCEO
VEBO
Collector current
IC
Collector power
dissipation
Junction temperature
Storage temperature
Single pulse Pw=100ms
PC
Tj
Tstg
Limits
25
20
12
0.5
1
0.2
150
55∼+150
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
COLLECTOR
3
1
BASE
2
EMITTER
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Symbol Min. Typ. Max. Unit
Conditions
BVCBO 25
V IC=10µA
BVCEO 20
V IC=1mA
BVEBO 12
V IE=10µA
ICBO
0.5 µA VCB=20V
IEBO
0.5 µA VEB=10V
VCE(sat)
0.18 0.4
V IC/IB=500mA/20mA
DC current transfer ratio
Transition frequency
Output capacitance
Output On-resistance
Measured using pulse current
hFE 820 2700 VCE=3V, IC=10mA
fT350 MHz VCE=10V, IE=−50mA, f=100MHz
Cob 8.0 pF VCB=10V, IE=0A, f=1MHz
Ron 0.8 pF IB=1mA, Vi=100mV(rms), f=1kHz
ƽ hFE Values Classification, Device Marking and Ordering Information
Device
hFE
Marking
Shipping
L2SD2114KVLT1
820~1800
BV 3000/Tape&Reel
L2SD2114KVLT1G
820~1800
BV
(Pb-Free)
3000/Tape&Reel
L2SD2114KWLT1
1200~2700
BW 3000/Tape&Reel
L2SD2114KWLT1G
1200~2700
BW
(Pb-Free)
3000/Tape&Reel
L2SD2114K*LT1–1/4


Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
L2SD2114KVLT1The function is Epitaxial planar type NPN silicon transistor. Leshan Radio CompanyLeshan Radio Company
L2SD2114KVLT1GThe function is Epitaxial planar type NPN silicon transistor. Leshan Radio CompanyLeshan Radio Company

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