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PDF AP1662 Data sheet ( Hoja de datos )
| Número de pieza | AP1662 | |
| Descripción | HIGH PERFORMANCE POWER FACTOR CORRECTOR | |
| Fabricantes | BCD | |
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Data Sheet
HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662
General Description
The AP1662 is an active power factor control IC
which is designed mainly for use as a pre-converter
in electronic ballast, AC-DC adapter and off-line
SMPS applications.
.
The IC includes an internal start-up timer for
stand-alone applications, a one-quadrant multiplier to
realize near unity power factor and a zero current
detector to ensure DCM boundary conduction
operation.
The totem pole output stage is capable of driving
power MOSFET with 600mA source current and
800mA sink current.
Designed with advanced BiCMOS process, the
AP1662 features low start-up current, low operation
current and low power dissipation. The AP1662 also
has rich protection features including over-voltage
protection, input under-voltage lockout with
hysteresis and multiplier output clamp to limit
maximum peak current.
The AP1662 meets IEC61000-3-2 standard even at
one-quadrant load and THD lower than 10% at
high-end line voltage and full load.
The IC is available in SOIC-8 and DIP-8 packages.
Features
• Comply with IEC61000-3-2 Standard
• Proprietary Design for Minimum THD
• Zero Current Detection Control for DCM
Boundary Conduction Mode
• Adjustable Output Voltage with Precise
Over-voltage Protection
• Low Start-up Current with 40µA Typical Value
• Low Quiescent Current with 2.5mA Typical
Value
• 1% Precision Internal Reference Voltage @
TJ=25°C
• Internal Start-up Timer
• Disable Function for Reduced Current
Consumption
• Totem Pole Output with 600mA Source and
800mA Sink Current Capability
• Under-voltage Lockout with 2.5V Hysteresis
Applications
• Electronic Ballast
• AC-DC Adapter
• Off-line SMPS
• Single Stage PFC LED Driver
SOIC-8
DIP-8
Jul. 2012 Rev. 1. 3
Figure 1. Package Types of AP1662
BCD Semiconductor Manufacturing Limited
1
1 page  
Data Sheet
HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662
Absolute Maximum Ratings (Note 1)
Parameter
Power Supply Voltage
Operating Supply Current
Input/Output of Error Amplifier,
Input of Multiplier
Current Sense Input
Symbol
VCC
ICC
VINV, VCOMP,
VMULT
VCS
Zero Current Detector Input
IZCD
Power Dissipation and Thermal
characteristics @ TA=50°C
Thermal Resistance
(Junction to Ambient)
Operating Junction Temperature
Storage Temperature Range
Lead Temperature (Soldering, 10
Seconds)
ESD (Human Body Model)
ESD (Machine Model)
PTOT
RθJA
TJ
TSTG
TLEAD
VESD(HBM)
VESD(MM)
Value
Self-limited
30
-0.3 to 7
-0.3 to 7
Source
Sink
DIP-8
SOIC-8
DIP-8
SOIC-8
-40 to 150
-65 to 150
-50
10
1
0.65
100
150
260
3000
200
Unit
V
mA
V
V
mA
W
ºC/W
ºC
ºC
ºC
V
V
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Jul. 2012 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
5
5 Page 
Data Sheet
HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662
Typical Performance Characteristics (Continued)
2.0
1.8
1.6
1.4
1.2
1.0
-50
V =12V
CC
V =Upper Clamp
COMP
0 50 100
Junction Temperature (oC)
150
1.0
0.8
0.6
0.4
0.2
0.0
-50
V =12V
CC
V =4V
COMP
V =1V
MULT
0 50 100
Junction Temperature (oC)
150
Figure 12. VCS-CLAMP vs. TJ
Figure 13. Multiplier Gain vs. TJ
0
V =12V
CC
V =Lower Clamp
-2 ZCD
-4
-6
-8
-50 0 50 100 150
Junction Temperature (oC)
Figure 14. ZCD Source Capability vs. TJ
7
6
Upper Clamp
5
V =12V
CC
4
I = + 2.5mA
ZCD
3
2
1 Lower Clamp
0
-50 0 50 100 150
Junction Temperature (oC)
Figure 15. ZCD Clamp Levels vs. TJ
Jul. 2012 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
11
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet AP1662.PDF ] | |
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