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IRF7353D1PbF Datasheet PDF - International Rectifier

Part Number IRF7353D1PbF
Description FETKY MOSFET / Schottky Diode
Manufacturers International Rectifier 
Logo International Rectifier Logo 
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IRF7353D1PbF datasheet, circuit
PD - 95251A
IRF7353D1PbF
l Co-packaged HEXFET® Power MOSFET
and Schottky Diode
l Ideal For Buck Regulator Applications
A
l N-Channel HEXFET
A
l Low VF Schottky Rectifier
l Generation 5 Technology
l SO-8 Footprint
S
G
l Lead-Free
Description
FETKYä MOSFET / Schottky Diode
18
27
36
45
Top View
K VDSS = 30V
K
D RDS(on) = 0.029
D Schottky Vf = 0.39V
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
SO-8
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
Maximum
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Continuous Drain Current
Pulsed Drain Current À
Power Dissipation
Linear Derating Factor
6.5
5.2
52
2.0
1.3
16
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Á
± 20
-5.0
TJ, TSTG
Junction and Storage Temperature Range
-55 to +150
Units
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Junction-to-Ambient …
Maximum
62.5
Notes:
 Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
‚ Starting TJ = 25°C, L = 10mH, RG = 25, IAS = 4.0A
ƒ ISD 4.0A, di/dt 74A/µs, VDD V(BR)DSS, TJ 150°C
„ Surface mounted on FR-4 board, t 10sec.
www.irf.com
Units
°C/W
1
10/7/04

1 page
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IRF7353D1PbF pdf, schematic
IRF7353D1PbF
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
30 — —
— 0.023 0.032
— 0.032 0.046
1.0 — —
— 14 —
— — 1.0
— — 25
— — 100
— — -100
— 22 33
— 2.6 3.9
— 6.4 9.6
— 8.1 12
— 8.9 13
— 26 39
— 17 26
— 650 —
— 320 —
— 130 —
V
V
S
µA
nA
nC
ns
pF
VGS = 0V, ID = 250µA
VGS = 10V, ID = 5.8A
VGS = 4.5V, ID = 4.7A
VDS = VGS, ID = 250µA
VDS = 24V, ID = 5.8A
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 55°C
VGS = 20V
VGS = -20V
ID = 5.8A
VDS = 24V
VGS = 10V (see figure 8)
VDD = 15V
ID = 1.0A
RG = 6.0
RD = 15
VGS = 0V
VDS = 25V
ƒ = 1.0MHz (see figure 7)
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units Conditions
IS Continuous Source Current (Body Diode) — — 2.5 A
ISM
Pulsed Source Current (Body Diode)
— — 30
VSD Body Diode Forward Voltage
— 0.78 1.0 V TJ = 25°C, IS = 1.7A, VGS = 0V
trr Reverse Recovery Time (Body Diode) — 45 68 ns TJ = 25°C, IF = 1.7A
Qrr Reverse Recovery Charge
— 58 87 nC di/dt = 100A/µs Â
Schottky Diode Maximum Ratings
Parameter
IF(av) Max. Average Forward Current
ISM Max. peak one cycle Non-repetitive
Surge current
Max. Units.
2.7 A
1.9
120
11 A
Conditions
50% Duty Cycle. Rectangular Wave, TA = 25°C
See Fig. 14
TA = 70°C
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with V applied
RRM
Schottky Diode Electrical Specifications
Parameter
VFM Max. Forward voltage drop
IRM
Ct
dv/dt
2
Max. Reverse Leakage current
Max. Junction Capacitance
Max. Voltage Rate of Charge
Max. Units
0.50
0.62
0.39 V
0.57
0.06 mA
16
92 pF
3600 V/ µs
Conditions
IF = 1.0A, TJ = 25°C
IF = 2.0A, TJ = 25°C
IF = 1.0A, TJ = 125°C
IF = 2.0A, TJ = 125°C .
VR = 30V TJ = 25°C
TJ = 125°C
VR = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated VR
www.irf.com

2 Page
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IRF7353D1PbF equivalent
Power Mosfet Characteristics
IRF7353D1PbF
100
D = 0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.0001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
100
www.irf.com
TJ = 150°C
10
TJ = 25°C
1 VGS = 0V A
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD , Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode
Forward Voltage
5

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Part NumberDescriptionManufacturers
IRF7353D1PbFThe function of this parts is a FETKY MOSFET / Schottky Diode.International Rectifier
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