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IRF7353D1PbF Datasheet PDF - International Rectifier

Part Number IRF7353D1PbF
Description FETKY MOSFET / Schottky Diode
Manufacturers International Rectifier 
Logo International Rectifier Logo 

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IRF7353D1PbF datasheet, circuit
PD - 95251A
IRF7353D1PbF
l Co-packaged HEXFET® Power MOSFET
and Schottky Diode
l Ideal For Buck Regulator Applications
A
l N-Channel HEXFET
A
l Low VF Schottky Rectifier
l Generation 5 Technology
l SO-8 Footprint
S
G
l Lead-Free
Description
FETKYä MOSFET / Schottky Diode
18
27
36
45
Top View
K VDSS = 30V
K
D RDS(on) = 0.029
D Schottky Vf = 0.39V
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
SO-8
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
Maximum
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Continuous Drain Current
Pulsed Drain Current À
Power Dissipation
Linear Derating Factor
6.5
5.2
52
2.0
1.3
16
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Á
± 20
-5.0
TJ, TSTG
Junction and Storage Temperature Range
-55 to +150
Units
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Junction-to-Ambient …
Maximum
62.5
Notes:
 Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
‚ Starting TJ = 25°C, L = 10mH, RG = 25, IAS = 4.0A
ƒ ISD 4.0A, di/dt 74A/µs, VDD V(BR)DSS, TJ 150°C
„ Surface mounted on FR-4 board, t 10sec.
www.irf.com
Units
°C/W
1
10/7/04

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IRF7353D1PbF equivalent
Power Mosfet Characteristics
IRF7353D1PbF
100
D = 0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.0001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
100
www.irf.com
TJ = 150°C
10
TJ = 25°C
1 VGS = 0V A
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD , Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode
Forward Voltage
5

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Information Total 8 Pages
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Part NumberDescriptionManufacturers
IRF7353D1PbFThe function is FETKY MOSFET / Schottky Diode.International Rectifier
International Rectifier

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