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FDPF770N15A Datasheet PDF - Fairchild Semiconductor

Part Number FDPF770N15A
Description N-Channel PowerTrench MOSFET
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 

Preview ( 9 pages )
		
FDPF770N15A datasheet, circuit
March 2015
FDPF770N15A
N-Channel PowerTrench® MOSFET
150 V, 10 A, 77 mΩ
Features
• RDS(on) = 60 mΩ (Typ.) @ VGS = 10 V, ID = 10 A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
• Consumer Appliances
• LED TV
• Synchronous Rectification for ATX / Sever / Telecom PSU
• Uninterruptible Power Supply
• Micro Solar Inverter
D
GDS
TO-220F
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
(f > 1 Hz)
- Continuous (TC = 25oC,Silicon Limited)
- Continuous (TC = 100oC,Silicon Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDPF770N15A
150
±20
±30
10
7
40
35
6.0
21
0.17
-55 to +150
300
FDPF770N15A
5.9
62.5
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2011 Fairchild Semiconductor Corporation
FDPF770N15A Rev. 1.4
1
www.fairchildsemi.com

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FDPF770N15A equivalent
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
8
0.5
0.2
1
0.1
0.05
0.02
0.01
0.1 Single pulse
0.05
10-5
10-4
PDM
t1
t2
*Notes:
1. ZθJC(t) = 5.9oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
1
Rt1e, cRteacntagnuglaurlaPr uPlusleseDDuuraratitoionn[[sseecc]]
10 100
©2011 Fairchild Semiconductor Corporation
FDPF770N15A Rev. 1.4
5
www.fairchildsemi.com

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Information Total 9 Pages
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