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PDF UPA2810 Data sheet ( Hoja de datos )
| Número de pieza | UPA2810 | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | Renesas | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2810
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The μ PA2810 is P-channel MOSFET designed for DC/DC converter and power
management applications of portable equipments.
FEATURES
• Low on-state resistance
RDS(on)1 = 12 mΩ MAX. (VGS = −10 V, ID = −13 A)
RDS(on)2 = 23 mΩ MAX. (VGS = −4.5 V, ID = −6.5 A)
• Built-in gate protection diode
• Thin type surface mount package with heat spreader
• RoHS Compliant
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are
connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS −30 V
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation Note2
Total Power Dissipation (PW = 10 sec) Note2
VGSS
ID(DC)
ID(pulse)
PT1
PT2
m20
m13
m78
1.5
3.8
V
A
A
W
W
Channel Temperature
Tch 150 °C
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg
−55 to +150
°C
IAS −13 A
EAS
16.9
mJ
PACKAGE DRAWING (Unit: mm)
1
2
8
7
36
5
4
3.3±0.15
3.0±0.1
0.10 S
0.35
0.2
1, 2, 3 : Source
4 : Gate
5, 6, 7, 8: Drain
0.4±0.1
0.4±0.1
1.75±0.1
EQUIVALENT CIRCUIT
Drain
THERMAL RESISTANCE
Channel to Ambient Thermal Resistance Note2
Channel to Case (Drain) Thermal Resistance
Rth(ch-A)
Rth(ch-C)
83.3
2.4
°C/W
°C/W
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mmt
3. Starting Tch = 25°C, VDD = −15 V, RG = 25 Ω, VGS = −20 → 0 V, L = 100 μH
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G19290EJ1V0DS00 (1st edition)
Date Published May 2008 NS
Printed in Japan
2008
1 page  
μ PA2810
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-12
-10
VDD = −6 V
-8
−15 V
−24 V
-6
-4
-2
0
0
ID = −13 A
10 20 30
QG - Gate Charge - nC
40
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
−10 V
10 VGS = −4.5 V
0V
1
0.1
0
Pulsed
0.5 1
VF(S-D) - Source to Drain Voltage - V
1.5
ORDERING INFORMATION
PART NUMBER
μ PA2810T1L-E1-AY Note
μ PA2810T1L-E2-AY Note
LEAD PLATING
Pure Sn
PACKING
Tape 3000 p/reel
Note Pb-free (This product does not contain Pb in the external electrode.)
PACKAGE
8-pin HVSON (3333)
0.028 g TYP.
Data Sheet G19290EJ1V0DS
5
5 Page | ||
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| PDF Descargar | [ Datasheet UPA2810.PDF ] | |
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