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Número de pieza | NP22N055SLE | |
Descripción | MOS FIELD EFFECT TRANSISTOR | |
Fabricantes | Renesas | |
Logotipo | ||
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No Preview Available ! DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP22N055HLE, NP22N055ILE, NP22N055SLE
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
These products are N-channel MOS Field Effect
Transistors designed for high current switching
applications.
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on)1 = 37 mΩ MAX. (VGS = 10 V, ID = 11 A)
RDS(on)2 = 45 mΩ MAX. (VGS = 5.0 V, ID = 11 A)
• Low Ciss : Ciss = 730 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP22N055HLE
NP22N055ILE Note
TO-251 (JEITA) / MP-3
TO-252 (JEITA) / MP-3Z
NP22N055SLE
TO-252 (JEDEC) / MP-3ZK
Note Not for new design.
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
55
Gate to Source Voltage
VGSS
±20
Drain Current (DC)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
±22
±55
Total Power Dissipation (TA = 25°C)
PT
1.2
Total Power Dissipation (TC = 25°C)
Single Avalanche Current Note2
Single Avalanche Energy Note2
PT
IAS
EAS
45
14 / 5
19 / 25
Channel Temperature
Tch 175
Storage Temperature
Tstg –55 to +175
V
V
A
A
W
W
A
mJ
°C
°C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25 Ω , VGS = 20 → 0 V (See Figure 4.)
(TO-252)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
3.33
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14136EJ4V0DS00 (4th edition)
Date Published July 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
1999, 2005
1 page NP22N055HLE, NP22N055ILE, NP22N055SLE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
90
80
70
60 VGS = 4.5 V
5.0 V
50 10 V
40
30
20
10
ID = 11 A
0
−50 0 50 100 150
Tch - Channel Temperature - ˚C
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
VGS = 0 V
f = 1 MHz
1000
Ciss
100 Coss
Crss
10
0.1
1 10
VDS - Drain to Source Voltage - V
100
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100 Pulsed
VGS = 10 V
10
VGS = 0 V
1
0.1
0.01
0
0.5 1.0
VSD - Source to Drain Voltage - V
1.5
Figure15. SWITCHING CHARACTERISTICS
1000
tf
100
10
tr
td(off)
td(on)
1
0.1 1 10 100
ID - Drain Current - A
1000
Figure16. REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1 1.0
10 100
IF - Drain Current - A
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80 16
14
60 12
VGS
VDD = 44 V
28 V
10
40 11 V
8
6
20 4
VDS
2
ID = 22 A
0
0 2 4 6 8 10 12 14 16
QG - Gate Charge - nC
Data Sheet D14136EJ4V0DS
5
5 Page |
Páginas | Total 6 Páginas | |
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NP22N055SLE | MOS FIELD EFFECT TRANSISTOR | Renesas |
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