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PDF K4080 Data sheet ( Hoja de datos )
| Número de pieza | K4080 | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4080
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4080 is N-channel MOS FET device that features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous
rectifier.
FEATURES
• Low on-state resistance
RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 24 A)
• Low QGD: QGD = 6.3 nC TYP.
• 4.5 V drive available
<R>
ORDERING INFORMATION
PART NUMBER
2SK4080(1)-S27-AY Note
2SK4080-ZK-E1-AY Note
2SK4080-ZK-E2-AY Note
PACKAGE
TO-251 (MP-3-b)
TO-252 (MP-3ZK)
TO-252 (MP-3ZK)
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 30 V
Gate to Source Voltage (VDS = 0 V)
VGSS ±20 V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±48
±144
A
A
Total Power Dissipation (TC = 25°C) PT1 29 W
Total Power Dissipation
PT2 1.0 W
Channel Temperature
Tch 150 °C
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg –55 to +150 °C
IAS 21 A
EAS
44.1
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
(TO-251)
(TO-252)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18214EJ2V0DS00 (2nd edition)
Date Published March 2007 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2006
1 page  
2SK4080
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
25
20
VGS = 4.5 V
15
10 10 V
5
0
-75
ID = 24 A
Pulsed
-25 25 75 125
Tch - Channel Temperature - °C
175
SWITCHING CHARACTERISTICS
100
td(off)
tf
10
td(on)
VDD = 15 V
VGS = 12 V
RG = 3 Ω
1
0.1
1
10
ID - Drain Current - A
tr
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
VGS = 10 V
10 4.5 V
0V
1
0.1
Pulsed
0.01
0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
10000
1000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
C iss
C oss
100
VGS = 0 V
f = 1 MHz
10
0.1
1
C rss
10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30
VDD = 24 V
25 15 V
6V
20
12
10
8
15 6
VGS
10 4
5 VDS
2
ID = 30 A
00
0 10 20 30 40
QG - Gate Chage - nC
1000
REVWESE RECOVERY TIME vs.
DRAIN CURRENT
100
10
1
0.1
di/dt = 100 A/μs
VGS = 0 V
1 10
ID - Drain Current - A
100
Data Sheet D18214EJ2V0DS
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet K4080.PDF ] | |
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