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C2690A Datasheet PDF - NEC

Part Number C2690A
Description NPN SILICON EPITAXIAL TRANSISTOR
Manufacturers NEC 
Logo NEC Logo 

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C2690A datasheet, circuit
DATA SHEET
SILICON POWER TRANSISTOR
2SC2690,2690A
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW/HIGH FREQUENCY POWER AMPLIFICATION
DESCRIPTION
These products are general purpose transistors designed for use
in audio and radio frequency power amplifiers.
FEATURES
Suitable for use in driver stage of 50 to 100 W audio amplifiers
and output stage of TV vertical deflection circuit.
High voltage and high fT
VCEO = 120 V (2SC2690) / 160 V (2SC2690A)
fT = 175 MHz (VCE = 5.0 V, IC = 0.2 A)
Complementary to the 2SA1220 and 2SA1220A PNP transistors.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SC2690
2SC2690-AZ Note
TO-126 (MP-5)
TO-126 (MP-5)
2SC2690A
TO-126 (MP-5)
2SC2690A-AZ Note
TO-126 (MP-5)
Note Pb-free (This product does not contain Pb in external electrode.)
PACKAGE DRAWING (Unit: mm)
8.5 MAX.
3.2 ±0.2
2.8 MAX.
12 3
12 TYP.
0.55
+0.08
–0.05
0.8
+0.08
–0.05
2.3 TYP.
2.3 TYP.
1.2 TYP.
1. Emitter
2. Collector
3. Base
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
2SA2690 2SA2690A
Collector to Base Voltage
VCBO
120
160
Collector to Emitter Voltage
VCEO
120
160
Emitter to Base Voltage
VEBO
5.0
Collector Current (DC)
Collector Current (pulse) Note
IC(DC)
IC(pulse)
1.2
2.5
Base Current (DC)
IB(DC)
0.3
Total Power Dissipation (TA = 25°C)
PT
1.2
Total Power Dissipation (TC = 25°C)
PT
20
Junction Temperature
Tj 150
Storage Temperature
Tstg 55 to +150
Note PW 10 ms, Duty Cycle 50%
V
V
V
A
A
A
W
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17501EJ2V0DS00 (2nd edition)
(Previous No. TC-3586)
Date Published March 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
1984

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