DataSheet39.com

What is IRL6342PbF?

This electronic component, produced by the manufacturer "International Rectifier", performs the same function as "Power MOSFET ( Transistor )".


IRL6342PbF Datasheet PDF - International Rectifier

Part Number IRL6342PbF
Description Power MOSFET ( Transistor )
Manufacturers International Rectifier 
Logo International Rectifier Logo 


There is a preview and IRL6342PbF download ( pdf file ) link at the bottom of this page.





Total 8 Pages



Preview 1 page

No Preview Available ! IRL6342PbF datasheet, circuit

VDS
VGS
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
ID
(@TA = 25°C)
30
±12
14.6
11
9.9
V
V
m
nC
A
Applications
Battery operated DC motor inverter MOSFET
System/Load Switch
PD - 97617
IRL6342PbF
HEXFET® Power MOSFET
6
6
6
*
'
'
'
'
SO-8
Features and Benefits
Features
Industry-Standard SO-8 Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Resulting Benefits
Multi-Vendor Compatibility
Environmentally Friendlier
Increased Reliability
Orderable part number
IRL6342PBF
IRL6342TRPBF
Package Type
SO-8
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Note
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 4.5V
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Continuous Drain Current, VGS @ 4.5V
cPulsed Drain Current
ePower Dissipation
ePower Dissipation
Linear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Notes  through „ are on page 2
www.irf.com
Max.
30
±12
9.9
7.9
79
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
1
01/03/11

line_dark_gray
IRL6342PbF equivalent
40
ID = 9.9A
35
30
25
20 TJ = 125°C
15
10
TJ = 25°C
5
1 2 3 4 5 6 7 8 9 10 11 12
Fig
12.
OVGn-SR, Gesatiest-aton-cSeouvrsce.
Voltage (V)
Gate Voltage
250
ID
TOP 1.3A
200 1.9A
BOTTOM 7.9A
150
100
50
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
IRL6342PbF
40
35
30
Vgs = 2.5V
25
20
Vgs = 4.5V
15
10
0 10 20 30 40 50 60 70 80
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
30000
25000
20000
15000
10000
5000
0
1E-8
1E-7
1E-6 1E-5
Time (sec)
1E-4
1E-3
Fig 15. Typical Power vs. Time
+
‚
-

RG
www.irf.com
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
ƒ Circuit Layout Considerations
Low Stray Inductance
-
Ground Plane
Low Leakage Inductance
Current Transformer
-„ +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
dv/dt controlled by RG
Driver same type as D.U.T.
VDD +
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
*VGS=10V
VDD
ISD
5


line_dark_gray

Preview 5 Page


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRL6342PbF electronic component.


Information Total 8 Pages
Link URL [ Copy URL to Clipboard ]
Download [ IRL6342PbF.PDF Datasheet ]

Share Link :

Electronic Components Distributor


An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists.


SparkFun Electronics Allied Electronics DigiKey Electronics Arrow Electronics
Mouser Electronics Adafruit Newark Chip One Stop


Featured Datasheets

Part NumberDescriptionMFRS
IRL6342PbFThe function is Power MOSFET ( Transistor ). International RectifierInternational Rectifier

Semiconductors commonly used in industry:

1N4148   |   BAW56   |   1N5400   |   NE555   |  

LM324   |   BC327   |   IRF840  |   2N3904   |  



Quick jump to:

IRL6     1N4     2N2     2SA     2SC     74H     BC     HCF     IRF     KA    

LA     LM     MC     NE     ST     STK     TDA     TL     UA    



Privacy Policy   |    Contact Us     |    New    |    Search