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PDF IXSA20N60B2D1 Data sheet ( Hoja de datos )
| Número de pieza | IXSA20N60B2D1 | |
| Descripción | High Speed IGBT | |
| Fabricantes | IXYS Corporation | |
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High Speed IGBT
IXSA 20N60B2D1
IXSP 20N60B2D1
Short Circuit SOA Capability
Preliminary Data Sheet
VCES = 600 V
IC25 = 35 A
VCE(sat) = 2.5 V
Symbol
Test Conditions
VCES
VCGR
VGES
VGEM
IC25
IC110
IF(110)
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1 ms
VCGlaEm= p1e5dVi,nTdJu=ct1iv2e5°loCa,dRG = 82Ω
tSC
(SCSOA)
PC
TJ
TJM
Tstg
Weight
VGE = 15 V, VCE = 360 V, TJ = 125°C
RG = 82 Ω, non repetitive
TC = 25°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering for 10s
Maximum Ratings
600
600
± 20
± 30
35
20
11
60
@
0IC.M8
= 32
VCES
10
V
V
V
V
A
A
A
A
A
μs
190
-55 ... +150
150
-55 ... +150
2
300
260
W
°C
°C
°C
g
°C
°C
Symbol
BVCES
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 250 μA, VGE = 0 V
IC = 750 μA, VCE = VGE
VVGCEE
=
=
0VVCES
VCE = 0 V, VGE = ± 20 V
IC = 16A, VGE = 15 V
Characteristic Values
(TJ
=
25°C,
unless
min.
otherwise specified)
typ. max.
600
3.5
TJ = 125 °C
V
6.5 V
85 μA
0.6 mA
± 100 nA
2.5 V
© 2004 IXYS All rights reserved
TO-220 (IXSP)
GC E
TO-220 (IXSA)
C (TAB)
G
C
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
• International standard packages
• Guaranteed Short Circuit SOA
capability
• Low VCE(sat)
- for low on-state conduction losses
• High current handling capability
• MOS Gate turn-on
- drive simplicity
• Fast fall time for switching speeds
up to 20 kHz
Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Welding
Advantages
• High power density
DS99181B(12/05)
1 page  
IXSA 20N60B2D1
IXSP 20N60B2D1
Fig. 13. Dependence of Turn-off
Sw itching Tim e on Tem perature
300
280
td(off)
260 tfi - - - - -
240 RG = 10Ω
220 VGE = 15V
IC = 32A
200 VCE = 400V
180
160 IC = 16A
140
IC = 8A
120
IC = 32A
100
80
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
1,000
Fig. 15. Capacitance
f = 1 MHz
Cies
100 Coes
10
0
Cres
5 10 15 20 25 30 35 40
VC E - Volts
Fig. 14. Gate Charge
16
14 VCE = 480V
I C = 16A
12 I G = 10mA
10
8
6
4
2
0
0 5 10 15 20 25 30 35
Q G - nanoCoulombs
33
30
27
24
21
18
15
12
9
6
3
0
100
Fig. 16. Reverse-Bias Safe
Operating Area
TJ = 125ºC
RG = 10Ω
dV/dT < 10V/ns
200 300 400 500
VC E - Volts
600
Fig. 17. Maxim um Transient Therm al Resistance
1.00
0.50
0.10
1
10
Pulse Width - milliseconds
100
1,000
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXSA20N60B2D1.PDF ] | |
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