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PDF APM4546J Data sheet ( Hoja de datos )
| Número de pieza | APM4546J | |
| Descripción | Dual Enhancement Mode MOSFET | |
| Fabricantes | Anpec Electronics | |
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APM4546J
Dual Enhancement Mode MOSFET (N-and P-Channel)
Features
Pin Description
• N-Channel
30V/8A,
R
DS(ON)
=20mΩ
(typ.)
@
V
GS
=
10V
RDS(ON) =27mΩ (typ.) @ VGS = 4.5V
• P-Channel
-30V/-6A,
RDS(ON) =38mΩ (typ.) @ VGS =-10V
R
DS(ON)
=46mΩ
(typ.)
@
V
GS
=-4.5V
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free Available (RoHS Compliant)
Applications
Top View of PDIP − 8
(8) (7)
D1 D1
(3)
S2
(4)
G2
(2)
G1
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
S1 D2 D2
(1) (5) (6)
N-Channel MOSFET P-Channel MOSFET
Ordering and Marking Information
APM4546
Lead Free Code
Handling Code
Temp. Range
Package Code
Package Code
J : PDIP-8
Operating Junction Temp. Range
C : -55 to 150 °C
Handling Code
TU : Tube
Lead Free Code
L : Lead Free Device Blank : Original Device
APM4546 J :
APM4546
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering
operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C
for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
Rev. B.3 - Jan., 2006
1
www.anpec.com.tw
1 page  
APM4546J
Typical Characteristics (Cont.)
N-Channel
30
25
20
Output Characteristics
V = 4, 5, 6, 7, 8, 9, 10V
GS
3V
15
10 2.5V
5
2V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
40
36
32
V =4.5V
GS
28
24
V =10V
20 GS
16
12
0 5 10 15 20 25 30
ID - Drain Current (A)
Transfer Characteristics
30
25
20
15 T =125oC
j
10
T =25oC
j
5
T =-55oC
j
0
012345
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.8
IDS=250µA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright © ANPEC Electronics Corp.
Rev. B.3 - Jan., 2006
5
www.anpec.com.tw
5 Page 
APM4546J
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
TP
TL
Tsmax
tp
Ramp-up
tL
Critical Zone
TL to TP
Tsmin
ts
Preheat
Ramp-down
25 t 25 °C to Peak
Classification Reflow Profiles
Time
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
3°C/second max.
100°C
150°C
60-120 seconds
3°C/second max.
150°C
200°C
60-180 seconds
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classificatioon Temperature (Tp)
183°C
60-150 seconds
See table 1
217°C
60-150 seconds
See table 2
Time within 5°C of actual
Peak Temperature (tp)
10-30 seconds
20-40 seconds
Ramp-down Rate
6°C/second max.
6°C/second max.
Time 25°C to Peak Temperature
6 minutes max.
8 minutes max.
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright © ANPEC Electronics Corp.
Rev. B.3 - Jan., 2006
11
www.anpec.com.tw
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet APM4546J.PDF ] | |
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