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Número de pieza | 2DD2652 | |
Descripción | NPN SURFACE MOUNT TRANSISTOR | |
Fabricantes | Diodes | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2DD2652 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Features
• Epitaxial Planar Die Construction
• Low Collector-Emitter Saturation Voltage
• Ideal for Low Power Amplification and Switching
• Complementary PNP Type Available (2DB1689)
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green Device" (Note 2)
2DD2652
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
C
Top View
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
BE
Device Schematic
Symbol
VCBO
VCEO
VEBO
IC
ICM
Value
15
12
6
1.5
3
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C
Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
300
417
500
250
-55 to +150
Unit
mW
°C/W
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(SAT)
hFE
Min
15
12
6
⎯
⎯
⎯
270
Output Capacitance
Cobo
⎯
Typ
⎯
⎯
⎯
⎯
⎯
80
⎯
11
Max
⎯
⎯
⎯
0.1
0.1
200
680
⎯
Unit
V
V
V
μA
μA
mV
⎯
pF
Current Gain-Bandwidth Product
fT
⎯ 260 ⎯
MHz
Notes:
1. No purposefully added lead.
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch2 copper pad layout.
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
Conditions
IC = 10μA, IE = 0
IC = 1mA, IB = 0
IE = 10μA, IC = 0
VCB = 15V, IE = 0
VEB = 6V, IC = 0
IC = 500mA, IB = 25mA
VCE = 2V, IC = 200mA
VCB = 10V, IE = 0,
f = 1MHz
VCE = 2V, IC = 100mA,
f = 100MHz
2DD2652
Document number: DS31633 Rev. 2 - 2
1 of 4
www.diodes.com
December 2008
© Diodes Incorporated
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet 2DD2652.PDF ] |
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