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2DD1766P Datasheet PDF - Diodes

Part Number 2DD1766P
Description NPN SURFACE MOUNT TRANSISTOR
Manufacturers Diodes 
Logo Diodes Logo 

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2DD1766P/Q/R
NPN SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary PNP Type Available (2DB1188)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
Case: SOT89-3L
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
SOT89-3L
3E
COLLECTOR
2,4
C4 2 C
1
BASE
1B
3
TOP VIEW
EMITTER
Schematic and Pin Configuration
Symbol
VCBO
VCEO
VEBO
ICM
IC
Value
40
32
5
2.5
2
Unit
V
V
V
A
A
Symbol
PD
RθJA
Tj, TSTG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Symbol Min Typ Max
V(BR)CBO
40
V(BR)CEO
32
V(BR)EBO
5
⎯⎯
ICBO
1
IEBO
1
VCE(SAT)
0.3 0.8
2DD1766P
82 180
2DD1766Q hFE 120 270
2DD1766R
180 390
fT 220
Cob 13
Unit
V
V
V
μA
μA
V
MHz
pF
Conditions
IC = 50μA, IE = 0
IC = 1mA, IB = 0
IE = 50μA, IC = 0
VCB = 20V, IE = 0
VEB = 4V, IC = 0
IC = 2A, IB = 0.2A
VCE = 3V, IC = 0.5A
VCE = 5V, IE = -50mA,
f = 100MHz
VCB = 10V, IE = 0,
f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.
DS31167 Rev. 4 - 2
1 of 4
www.diodes.com
2DD1766P/Q/R
© Diodes Incorporated



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