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2DB1188P Datasheet PDF - Diodes

Part Number 2DB1188P
Description 32V PNP MEDIUM POWER TRANSISTOR
Manufacturers Diodes 
Logo Diodes Logo 

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Features
BVCEO > -32V
IC = -2A high Continuous Current
Low saturation voltage VCE(sat) < 800mV @ 2A
Complementary NPN Type: 2DD1766
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
2DB1188P/Q/R
32V PNP MEDIUM POWER TRANSISTOR IN SOT89
Mechanical Data
Case: SOT89
Case material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.052 grams (approximate)
SOT89
Top View
C
B
E
Device Symbol
E
CC
B
Pin Out – Top View
Ordering Information (Note 4)
Part Number
2DB1188P-13
2DB1188Q-13
2DB1188Q-13R
2DB1188R-13
Marking
P23P
P23Q
P23Q
P23R
Reel size (inches)
13
13
13
13
Tape width (mm)
12
12
12
12
Quantity per reel
2,500
2,500
4,000
2,500
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green"
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
P23x = Product Type Marking Code
Where P23P = 2DB1188P
P23Q = 2DB1188Q
P23R = 2DB1188R
= Manufacturers’ code marking
YWW = Date Code Marking
Y = Last Digit of Year (ex: 1 = 2011)
WW = Week Code (01 – 53)
2DB1188P/Q/R
Document number: DS31144 Rev. 7 - 2
1 of 7
www.diodes.com
February 2013
© Diodes Incorporated

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2DB1188P equivalent
1.2
1.0
0.8
TA = -55°C
0.6
TA = 25°C
0.4 TA = 85°C
0.2 TA = 150°C
IC/IB = 10
0
0.0001 0.001
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Figure 5. Typical Base-Emitter Saturation Voltage
vs. Collector Current
140
120
100
80
60
40
20
0
0 10 20 30 40 50 60 70 80 90 100
IE, Emitter Current (mA)
Figure 7. Typical Gain-Bandwidth Product vs. Emitter Current
2DB1188P/Q/R
60
50 f = 1MHz
40
30
20
10
0
0.01 0.1
1
10 100
VR, REVERSE VOLTAGE (V)
Figure 6. Typical Output Capacitance Characteristics
2DB1188P/Q/R
Document number: DS31144 Rev. 7 - 2
5 of 7
www.diodes.com
February 2013
© Diodes Incorporated


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