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PDF DSF01S30SC Data sheet ( Hoja de datos )
| Número de pieza | DSF01S30SC | |
| Descripción | Silicon Epitaxial Schottky Barrier Type Diode | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de DSF01S30SC (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
DSF01S30SC
DSF01S30SC
High-Speed Switching Application
Unit: mm
Abusolute Maximum Ratings (Ta = 25°C)
２
Characteristic
Symbol
Rating
Unit
Reverse voltage
Average forward current
Surge current (10ms)
Junction temperature
Storage temperature range
VR
IO
IFSM
Tj
Tstg
30
100*
2
125
−55 to 125
*: Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad
dimensions of 4 × 4 mm.
V
mA
A
°C
°C
１
0 .32±0.03
0.27±0.02
0.025±0.015
１： CATHODE
２： ANODE
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
SC2
JEDEC
―
JEITA
―
TOSHIBA
1-1R1A
Weight: 0.17 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Forward voltage
Reverse current
Reverse current
Total capacitance
Symbol
VF(1)
VF(2)
IR(1)
IR(2)
CT
Test
Circuit
Test Condition
― IF = 10 mA
― IF = 100 mA
― VR = 10 V
― VR = 30 V
― VR = 0, f = 1 MHz
Min Typ. Max Unit
― 0.27 0.3
V
― 0.41 0.5
V
― ― 7 μA
― ― 50 μA
⎯ 9.3 ⎯ pF
Marking
Equivalent Circuit (Top View)
1 2009-12-03
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet DSF01S30SC.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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