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What is TK07H90A?

This electronic component, produced by the manufacturer "Toshiba Semiconductor", performs the same function as "Silicon N Channel MOS Type Field Effect Transistor".


TK07H90A Datasheet PDF - Toshiba Semiconductor

Part Number TK07H90A
Description Silicon N Channel MOS Type Field Effect Transistor
Manufacturers Toshiba Semiconductor 
Logo Toshiba Semiconductor Logo 


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TK07H90A
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS IV)
TK07H90A
Switching Regulator Applications
Unit: mm
z Low drainsource ON resistance : RDS (ON) = 1.6Ω (typ.)
z High forward transfer admittance : |Yfs| =5.0 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 720V)
z Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
900
900
±30
7
21
150
491
7
15
150
55~150
V
V
V
A
A
W
mJ
A
mJ
°C
°C
1: GATE
2: DRAIN (HEAT SINK)
3: SOURCE
JEDEC
JEITA
TOSHIBA
2-16K1A
Weight: 3.8 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
0.833
50
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 18.4 mH, RG = 25 , IAR = 7 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2
3
1 2006-11-13

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TK07H90A equivalent
TK07H90A
rth – tw
10
1
Duty=0.5
0.2
0.1
0.1 0.05
0.02
0.01
10μ
0.01
100μ
Single pulse
110
PDM
t
T
Duty = t/T
Rth (ch-c) = 0.833°C/W
100
1
10
Pulse width tw (s)
Safe operating area
100
ID max (Pulse) *
10 ID max (Continuous)
100 μs *
1 ms *
1 DC operation
Tc = 25°C
0.1
* Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.01
1
10
VDSS max
100 1000
Drainsource voltage VDS (V)
EAS – Tch
1000
800
600
400
200
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
15 V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 Ω
VDD = 90 V, L =18.4 mH
Wave form
ΕAS
=
1
2
L
I2
⎜⎜⎝⎛
BVDSS
BVDSS VDD
⎟⎟⎠⎞
5 2006-11-13


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for TK07H90A electronic component.


Information Total 6 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
TK07H90AThe function is Silicon N Channel MOS Type Field Effect Transistor. Toshiba SemiconductorToshiba Semiconductor

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