CM2N60F Datasheet PDF - Jingdao Electronic
| Part Number | CM2N60F | |
| Description | N-Channel VDMOS | |
| Manufacturers | Jingdao Electronic | |
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There is a preview and CM2N60F download ( pdf file ) link at the bottom of this page. Total 3 Pages | ||
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R
www.jdsemi.cn
深圳市晶导电子有限公司
ShenZhen Jingdao Electronic Co.,Ltd.
CM2N60F
POWER MOSFET
◆600V N-Channel VDMOS
◆使用及贮存时需防静电
◆符合 RoHS 等环保指令要求
1．主要用途
主要用于充电器、LED 驱动、PC 辅助
电源等各类功率开关电路
2．主要特点
开关速度快
通态电阻小，输入电容小
1
2
3．封装外形
TO-220FL
4．电特性
4.1 极限值
除非另有规定，Tamb= 25℃
参数名称
漏源反向电压
连续漏极电流
漏极脉冲电流
栅源电压
单脉冲雪崩能量
热阻（结到壳）
耗散功率(Ta=25℃)
结温
贮存温度
4.2 电参数
除非另有规定，Tamb= 25℃
参数名称
符号
漏源击穿电压
通态电阻
阈值电压
漏源漏电流
栅源漏电流
源漏二极管正向压降
关断延迟时间
BVDSS
RDSON*
VGS（TH）
IDSS
IGSS
VSD*
td(off)
输入电容
Ciss
＊ 脉冲测试 ：tP≤ 300us, δ≤2%
＊ L=10mH，ID=2A，TJ= 25℃
1 栅极(G) 2 漏极 (D) 3 源极(S)
符号
VDSS
ID
IDM
VGS
EAS
RθJC
Ptot
Tj
Tstg
额定值
600
2.0
8.0
±30
80
5.21
24
150
-55～150
单位
V
A
A
V
mJ
℃/W
W
℃
℃
测试条件
VGS=0V，ID=250μA
VGS=10V，ID=1A
VDS=VGS，ID=250μA
VDS=600V，VGS=0V
VGS= ± 30V
IS=2A，VGS=0V
VDD=300V，ID=2A
RG=18 Ω，VGS=10V
VGS=0V，VDS=25V
f=1.0MHZ
规范值
最小 典型 最大
600
3.4 4
24
25
±100
1.5
单位
V
Ω
V
μA
nA
V
33 ns
280 pF
地址：深圳市宝安区新安街道留仙二路鸿辉工业园 3 号厂房 电话：0755-29799516 传真：0755-29799515
第 1 页 2013 版
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for CM2N60F electronic component. |
| Information | Total 3 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ CM2N60F.PDF Datasheet ] | |
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