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PDF HT2015 Data sheet ( Hoja de datos )
| Número de pieza | HT2015 | |
| Descripción | HART Modem | |
| Fabricantes | Smar Research | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HT2015 (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
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SmarResearch
TechnologySource
HART®
Fieldbus
Profibus
Intrinsic Safety
Configuration Tools
Semiconductors
Training
Custom Design
HART Modem
HT2015
DataSheet
Features
• Can be used in designs presently using the SYM20C15 or equivalent
type chip
• Single-chip, half-duplex 1200 bits per second FSK modem
• Bell 202 shift frequencies of 1200 Hz and 2200 Hz
• 3.3V-5.0V power supply
• Transmit-signal wave shaping
• Receive band-pass filter
• Low power: optimal for intrinsically safe applications
• CMOS compatible
• Internal oscillator requires 460.8 kHz crystal or ceramic resonator
• Meets HART physical layer requirements
• Industrial temperature range of -40 °C to +85 °C
• Available in a 28-pin PLCC and 32-pin LQFP packages
(LQFP pictured)
©Smar Research Corporation
1 HT2015DS - 0303
1 page  
ORXAF*: Analog Receive Filter Output
This signal is the square wave output of TEST(12:1): Factory Test
the receiver high-pass filter.
These are factory test pins. For normal
operation, tie these signals as per Table
ORXD: Digital Receive Output (CMOS) 1.
This signal outputs the digital receive
data. When the received signal (IRXA) is VDD: Digital Power
1200 Hz, ORXD outputs logic high. When This is the power for the digital modem
the received signal (IRXA) is 2200 Hz, circuitry.
ORXD outputs logic low. ORXD is
qualified internally with OCD and is logic VDDA: Analog Supply Voltage
high when OCD is low.
This is the power for the analog modem
circuitry.
OTXA: Analog Transmit Output
This output provides the trapezoidal signal VSS: Ground
controlled by ITXD. When ITXD is low, the This is the analog and digital ground.
output frequency is 2200 Hz. When ITXD
is high, the output frequency is 1200 Hz. VSSA: Analog Ground
This output is active when INRTS is low
and 0.5 VDC when INRTS is high.
OXTL: Oscillator Output
This output from the internal oscillator
must be connected to an external 460.8
kHz clock signal or to a parallel mode
460.8 kHz ceramic resonator when using
the internal oscillator.
©Smar Research Corporation
5 HT2015DS - 0303
5 Page 
Electrical Characteristics
ABSOLUTE MAXIMUMS
Symbol
TA
TS
VDD
VIN, VOUT
TL
Parameter
Ambient
Storage Temperature
Supply Voltage
DC Input, Output
Lead Temperature (soldering)
Min.
Max.
Units
-40 +85
C
-55 150
C
- .3 6.0
V
- .3 VDD + .3
V
250 C
Cautions:
1. CMOS devices are damaged by high-energy electrostatic discharge. Devices must be stored in conductive
foam or with all pins shunted. Precautions should be taken to avoid application of voltages higher than the
maximum rating. Stresses above absolute maximum ratings may result in damage to the device.
2. Remove power before insertion or removal of this device.
Symbol
DC CHARACTERISTICS
(VDD = 3.0V to 5.5V, VSS = 0V, TA = -40C to +85C)
Parameter
VDD Min. Typical
Max.
VIL Input Voltage, Low
3.0 - 5.5
.3 * VDD
VIH Input Voltage
3.0 - 5.5 .7 * VDD
VOL
Output Voltage, Low (IOL = .67mA)
3.0 - 5.5
.4
VOH Output Voltage, High (IOH = .67mA) 3.0 - 5.5 2.4
CIN Input Capacitance
Analog Input
IRXA
Digital Input
2.9
25
3.5
IIL/IH Input Leakage Current
+/-500
IOLL Output Leakage Current
+/-10
IDD Power Supply Current
(RBIAS = 500kΩ, IAREF = 1.235V)
3.3
5.0
150 180
170 200
IAREF Analog Reference
3.3 1.2 1.235 2.6
5.0 2.5
ICDREF * Carrier Detect Reference
(IAREF = .08V)
OCBIAS Comparator Bias Current
(RBIAS = 500kΩ, IAREF = 1.235V)
1.15
2.5
* The HART specification requires Carrier Detect (OCD) to be active between 80 and 120 mV p-p.
Setting ICDREF at IAREF—.08VDC will set the carrier detect to a nominal 100 mV p-p.
Units
V
V
V
V
pF
nA
µA
µA
V
V
µA
©Smar Research Corporation
11 HT2015DS - 0303
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet HT2015.PDF ] | |
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