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PDF MT3245 Data sheet ( Hoja de datos )
| Número de pieza | MT3245 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | MT Semiconductor | |
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MOS-TECH Semiconductor Co.,LTD
07
N-Channel Power MOSFET
4V, A, mΩ
Features
• RDS(on) = 3mΩ (Typ.)@ VGS = 10V, ID = 80A
• Qg(tot) = 345nC (Typ.)@ VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• RoHS Compliant
January 2010
Application
• Automotive Engine Control
• Powertrain Management
• Motors, Solenoids
• Electronic Steering
• Integrated Starter/ Alternator
• Distributed Power Architectures and VRMs
• Primary Switch for 12V Systems
D
GDS
TO-220
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-
-
-
Continuous
Continuous
Continuous
(TC
(TC
(TC
=
=
=
25oC, Silicon Limited)
100oC, Silicon Limited)
25oC, Package Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 2)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 100A.
Thermal Characteristics
Ratings
45
±20
120*
90*
35
400
1232
206
2.04
-55 to +175
200
RθJC
RθCS
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink (Typ.)
Thermal Resistance, Junction to Ambient
0.79
0.8
69.5
Units
V
V
A
A
mJ
W
W/oC
oC
oC
oC/W
oC/W
oC/W
©2010 MOS-TECH Semiconductor Corporation
MT3245 Rev. A
1
www.mtsemi.com
1 page  
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
MT3245 Rev. A
5 www.mtsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MT3245.PDF ] | |
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