EC103D1 Datasheet PDF - NXP Semiconductors
Part Number | EC103D1 | |
Description | SCR | |
Manufacturers | NXP Semiconductors | |
Logo | ||
There is a preview and EC103D1 download ( pdf file ) link at the bottom of this page. Total 13 Pages |
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SCR
22 July 2014
Product data sheet
1. General description
Planar passivated ultra sensitive gate Silicon Controlled Rectifier in a SOT54 (T0-92)
plastic package.
2. Features and benefits
• Planar passivated for voltage ruggedness and reliability
• Ultra sensitive gate
3. Applications
• Electronic ballasts
• Safety shut down and protection circuits
• Sensing circuits
• Smoke detectors
• Switched Mode Power Supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
VRRM
repetitive peak reverse
voltage
ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C;
state current
tp = 10 ms; Fig. 4; Fig. 5
IT(AV)
average on-state
current
half sine wave; Tlead ≤ 92 °C; Fig. 1
IT(RMS)
RMS on-state current half sine wave; Tlead ≤ 92 °C; Fig. 2;
Fig. 3
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 10 mA; Tj = 25 °C;
Fig. 7
Min Typ Max Unit
- - 400 V
- - 400 V
- - 8A
- - 0.5 A
- - 0.8 A
- 3 12 µA
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NXP Semiconductors
103
ITSM
(A)
102
EC103D1
SCR
003aac340
IT ITSM
tp t
Tj(init) = 25 °C max
10
10-5
10-4
10-3
tp (s)
tp = 10 ms
Fig. 5. Non-repetitive peak on-state current as a function of pulse duration; maximum values
10-2
EC103D1
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 July 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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Information | Total 13 Pages | |
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