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PDF A1518 Data sheet ( Hoja de datos )

Número de pieza A1518
Descripción PNP Transistor - 2SA1518
Fabricantes Sanyo 
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Ordering number:EN2159A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1518/2SC3912
Switching Applications (With Bias Resistance)
Application
· Switching circuits, inverters circuits, inferface
circuits, driver circuits.
Features
· On-chip bias resistance : R1=10k, R2=10k.
· Small-sized package : CP.
· Large current capacity : IC=500mA.
Package Dimensions
unit:mm
2018A
[2SA1518/2SC3912]
( ) : 2SA1518
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Peak Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
Conditions
ICBO
ICEO
IEBO
hFE
fT
VCB=(–)40V, IE=0
VCE=(–)40V, IB=0
VEB=(–)5V, IC=0
VCE=(–)5V, IC=(–)10mA
VCE=(–)10V, IC=(–)5mA
Output Capacitance
Cob VCB=(–)10V, f=1MHz
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Input OFF-State Voltage
Input ON-State Voltage
Input Resistance
Resistance Ratio
VCE(sat)
V(BR)CBO
V(BR)CEO
VI(off)
VI(on)
R1
IC=(–)20mA, IB=(–)1mA
IC=(–)10µA, IE=0
IC=(–)100µA, RBE=
VCE=(–)5V, IC=(–)100µA
VCE=(–)0.2V, IC=(–)10mA
R1/R2
C : Collector
B : Base
E : Emitter
SANYO : CP
Ratings
(–)50
(–)50
(–)10
(–)500
(–)800
200
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Ratings
min typ
(–)195
50*
(–)50
(–)50
(–)0.8
(–)1.0
7
0.9
(–)250
250
(200)
3.7
(5.5)
(–)0.1
(–)1.1
(–)2.0
10
1.0
max
(–)0.1
(–)0.5
(–)360
(–)0.3
(–)1.5
(–)4.0
13
1.1
Unit
µA
µA
µA
MHz
MHz
pF
pF
V
V
V
V
V
k
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/3307KI/8196AT, TS No.2159-1/2

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