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PDF HFH7N80 Data sheet ( Hoja de datos )
| Número de pieza | HFH7N80 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | SemiHow | |
| Logotipo |  |
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Mar 2010
HFH7N80
800V N-Channel MOSFET
BVDSS = 800 V
RDS(on) typ = 1.55 ȍ
ID = 7.0 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 35 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 1.55 ȍ (Typ.) @VGS=10V
100% Avalanche Tested
TO-3P
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25ఁ͚
– Continuous (TC = 100ఁ͚
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
800
7.0
4.4
28
ρ30
580
7.0
19.8
4.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25ఁ͚
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Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
198
1.59
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/ఁ
ఁ
ఁ
Thermal Resistance Characteristics
Symbol
RșJC
RșCS
RșJA
Junction-to-Case
Parameter
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.24
--
Max.
0.63
--
40
Units
ఁ͠Έ
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1 page  
Typical Characteristics (continued)
1.2
1.1
1.0
0.9 Notes :
1. VGS = 0 V
2. ID = 250 ȝ A
0.8
-100
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs Temperature
102
Operation in This Area
is Limited by R
DS(on)
100 Ps
101
1 ms
10 ms
100 DC
10-1
10-2
100
* Notes :
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
101 102
103
V , Drain-Source Voltage [V]
DS
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. VGS = 10 V
2. ID = 3.0 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
6
4
2
0
25 50 75 100 125
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs Case Temperature
150
100
D = 0.5
1 0 -1
1 0 -2
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
sin g le p u lse
* N o te s :
1 . Z (t) = 0.63 oC /W M a x.
TJC
2. D uty F actor, D = t /t
12
3 . T - T = P * Z (t)
JM C
DM TJC
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t , S q u a re W a ve P u lse D u ra tio n [s e c ]
1
101
Figure 11. Transient Thermal Response Curve
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5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HFH7N80.PDF ] | |
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