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PDF ITS4100S-SJ-N Data sheet ( Hoja de datos )
| Número de pieza | ITS4100S-SJ-N | |
| Descripción | Smart High-Side NMOS-Power Switch | |
| Fabricantes | Infineon | |
| Logotipo |  |
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ITS4100S-SJ-N
Smart High-Side NMOS-Power Switch
Data Sheet
Rev 1.0, 2012-09-01
Standard Power
1 page  
4 General Product Characteristics
ITS4100S-SJ-N
General Product Characteristics
4.1 Absolute Maximum Ratings
Table 1
Absolute maximum ratings1)at Tj = 25°C unless otherwise specified. Currents flowing into the
device unless otherwise specified in chapter “Block Diagram and Terms”
Parameter
Symbol
Values
Unit Note /
Min. Typ. Max.
Test Condition
Number
Supply voltage VS
Voltage
Voltage for short circuit protection
Output stage OUT
VS
VSSC
40 V
4.1.1
VS V -40°C < Tj < 150°C 4.1.2
Output Current; (Short circuit
current see electrical
characteristics)
IOUT
self A
limited
4.1.3
Input IN
Voltage
Current
Temperatures
VIN -10
IIN -5
16 V
5 mA
4.1.4
4.1.5
Junction Temperature
Storage Temperature
Power dissipation
Tj -40
Tstg -55
125 °C
125 °C
4.1.6
4.1.7
Ta = 25 °C2)
P tot
Inductive load switch-off energy dissipation
1.5 W
4.1.8
Tj = 125 °C; VS=13.5V; IL= 1A3)
ESD Susceptibility
EAS
870 mJ single pulse
4.1.9
ESD susceptibility (input pin)
VESD
-1
ESD susceptibility (all other pins) VESD
-5
1) Not subject to production test, specified by design
1 kV HBM4)
5 kV HBM4)
4.1.10
4.1.11
2) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70mm thick) copper area for Vbb connection. PCB
is vertical without blown air
3) Not subject to production test, specified by design
4) ESD susceptibility HBM according to EIA/JESD 22-A 114.
Note: Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” the normal operating range. Protection functions
are neither designed for continuous nor repetitive operation.
Data Sheet
5 Rev 1.0, 2012-09-01
5 Page 
ITS4100S-SJ-N
Typical Performance Characteristics
Standby Current ISSTB versus
Junction Temperature Tj
Typical Performance Graphs
Output Leakage current IOUTLK versus
Junction Temperature Tj
6 2.5
VIN=0V;Vs=32V
5
2
4
1.5
3
1
2
0.5
1
VIN=0V;Vs=32V
0
−40 −25 0 25 50 75 100 125
Tj [°C]
Initial Peak Short Circuit Current Limt ILSCP versus
Junction TemperatureTj
0
−40 −25 0 25 50 75 100 125
Tj [°C]
Initial Short Circuit Shutdown time tSCOFF versus
Junction Temperature Tj
14
12
10
8
6
4
2
Vs=20V
0
−40 −25 0 25 50 75 100 125
Tj [°C]
4
3.5
3
2.5
2
1.5
1
0.5
0
−40 −25
Vs=20V
0 25 50
Tj[°C]
75 100 125
Data Sheet
11 Rev 1.0, 2012-09-01
11 Page | ||
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| PDF Descargar | [ Datasheet ITS4100S-SJ-N.PDF ] | |
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