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PDF BSP372N Data sheet ( Hoja de datos )
| Número de pieza | BSP372N | |
| Descripción | Small-Signal-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSP372N (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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OptiMOS™ Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic Level (4.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
BSP372N
Product Summary
VDS
RDS(on),max
ID
VGS=10 V
VGS=4.5 V
100 V
0.23 W
0.27
1.8 A
PG-SOT223
Type
BSP372N
Package
SOT223
Tape and Reel
H6327: 1000 pcs/ reel
Marking
BSP372N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
ID
I D,pulse
T A=25 °C
T A=70 °C
T A=25 °C
Halogen-Free
Yes
Value
1.8
1.5
7.2
Packing
Non dry
Unit
A
Avalanche energy, single pulse
E AS I D=1.8 A, R GS=25 W
33 mJ
Reverse diode dv /dt
dv /dt
I D=1.8 A, V DS=80 V,
di /dt =200 A/µs,
T j,max=150 °C
Gate source voltage
Power dissipation1)
Operating and storage temperature
ESD Class
V GS
P tot T A=25 °C
T j, T stg
JESD22-A114 -HBM
Soldering Temperature
IEC climatic category; DIN IEC 68-1
6
±20
1.8
-55 ... 150
0 (<250V)
260 °C
55/150/56
kV/µs
V
W
°C
Rev 2.0
page 1
2013-04-03
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
7
10 V
5V
6 3V
5
2.8 V
4
3 2.5 V
2
1
2V
0
024
VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
800
BSP372N
700
600
2.5 V
500
400
300
3V
200 4 V
10 V
100
0
6 01234567
ID [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
7
6
5
4
3
2
1
0
0
Rev 2.0
25 °C
150 °C
123
VGS [V]
4
10
9
8
7
6
5
4
3
2
1
0
01234567
ID [A]
page 5
2013-04-03
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSP372N.PDF ] | |
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