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MDF8N60 Datasheet PDF - MagnaChip

Part Number MDF8N60
Description N-Channel MOSFET
Manufacturers MagnaChip 
Logo MagnaChip Logo 

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MDF8N60
N-Channel MOSFET 600V, 8A, 1.0
General Description
The MDF8N60 uses advanced MagnaChip’s MOSFET
Technology, which provides low on-state resistance, high
switching performance and excellent quality.
MDF8N60 is suitable device for SMPS, high Speed switching
and general purpose applications.
Features
VDS = 600V
VDS = 660V
ID = 8.0A
RDS(ON) ≤ 1.0Ω
Applications
@ Tjmax
@ VGS = 10V
@ VGS = 10V
Power Supply
PFC
High Current, High Speed Switching
G DS
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Drain-Source Voltage @ Tjmax
Gate-Source Voltage
Characteristics
Continuous Drain Current ()
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy EAR(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
Id limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VDSS @ Tjmax
VGSS
ID
IDM
PD
EAR
Dv/dt
EAS
TJ, Tstg
Rating
600
660
±30
8.0
4.9
32
46
0.37
4.6
4.5
320
-55~150
Unit
V
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Nov2009. Version 2.2
1
Symbol
RθJA
RθJC
Rating
62.5
2.71
Unit
oC/W
MagnaChip Semiconductor Ltd.

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MDF8N60 equivalent
Physical Dimensions
3 Leads, TO-220F
Dimensions are in millimeters unless otherwise specified
S y mbol
A
b
b1
C
D
E
e
F
G
L
L1
Q
Q1
¢R
M in
4 .5 0
0 .6 3
1 .1 5
0 .3 3
1 5 .4 7
9 .6 0
2 .3 4
6 .4 8
1 2 .2 4
2 .7 9
2 .5 2
3 .1 0
3 .0 0
Nom
2 .5 4
Max
4 .9 3
0 .9 1
1 .4 7
0 .6 3
1 6 .1 3
1 0 .7 1
2 .8 4
6 .9 0
1 3 .7 2
3 .6 7
2 .9 6
3 .5 0
3 .5 5
Nov2009. Version 2.2
5 MagnaChip Semiconductor Ltd.


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