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NCE7580D Datasheet PDF - NCE Power

Part Number NCE7580D
Description NCE N-Channel Enhancement Mode Power MOSFET
Manufacturers NCE Power 
Logo NCE Power Logo 

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http://www.ncepower.com
Pb Free Product
NCE7580D
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE7580D uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in PWM, load switching and
general purpose applications.
General Features
VDS = 75V,ID =80A
RDS(ON) <8m@ VGS=10VTyp6.5m
Special process technology for high ESD capability
Special designed for Convertors and power controls
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Application
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
Schematic diagram
Marking and pin assignment
TO-263-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE7580D
NCE7580D
TO-263-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25unless otherwise noted)
Drain-Source Voltage
Parameter
Symbol
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
Pulsed Drain Current
Maximum Power Dissipation
Peak diode recovery voltage
ID (100)
IDM
PD
dv/dt
Derating factor
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
Limit
75
±25
80
60
320
170
15
1.13
580
-55 To 175
Unit
V
V
A
A
A
W
V/ns
W/
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
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NCE7580D equivalent
http://www.ncepower.com
Figure7. BVDSS vs Junction Temperature
Pb Free Product
NCE7580D
Figure8. VGS(th) vs Junction Temperature
Figure9. Gate charge waveforms
Figure10. Capacitance
Figure11. Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
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