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NCE7580 Datasheet PDF - NCE Power

Part Number NCE7580
Description NCE N-Channel Enhancement Mode Power MOSFET
Manufacturers NCE Power 
Logo NCE Power Logo 

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http://www.ncepower.com
NCE7580
Pb-Free Product
NCE N-Channel Enhancement Mode Power MOSFET
General Description
The NCE7580 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in PWM, load switching and
general purpose applications.
Product Summary
BVDSS typ.
RDS(ON) typ.
max.
ID
84
6.5
8.0
80
V
m
m
A
Features
VDS=75VID=80A@ VGS=10V
RDS(ON)<8m@ VGS=10V
Special process technology for high ESD capability
Special designed for Convertors and power controls
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
100% UIS TESTED!
Application
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
TO-220-3L top view
Schematic diagram
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE7580
7580
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Table 1. Absolute Maximum Ratings (TA=25)
Parameter
Drain-Source Voltage (VGS=0V
Gate-Source Voltage (VDS=0V)
Drain Current (DC) at Tc=25
Drain Current (DC) at Tc=100
Drain Current-Continuous@ Current-Pulsed (Note 1)
Peak diode recovery voltage
Maximum Power Dissipation(Tc=25)
Derating factor
Single pulse avalanche energy (Note 2)
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS conditionTj=25,VDD=50V,VG=10V,L=0.3mH ,ID=62A;
Symbol
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
dv/dt
PD
EAS
TJ,TSTG
Value
75
±25
80
60
320
30
170
1.13
580
-55 To 175
Unit
V
V
A
A
A
V/ns
W
W/
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
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NCE7580 equivalent
http://www.ncepower.com
Figure7. BVDSS vs Junction Temperature
NCE7580
Pb-Free Product
Figure8. VGS(th) vs Junction Temperature
Figure9. Gate charge waveforms
Figure10. Capacitance
Figure11. Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
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