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Datasheet 1SS388 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1SS388 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE 1SS388
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
for high speed switching application
PINNING PIN 1 2
1
DESCRIPTION Cathode Anode
2
O
Top View Marking Code: "O" Simplified outline SOD-523 and symbol
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Maximum (Peak) Reverse Voltage Reverse Voltage Ave |  SEMTECH | diode |
| 2 | 1SS388 | SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS388
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE FEATURES
• Low forward voltage : VF(3)=0.54V(typ.) • Low reverse current : IR=5µA(typ.) • In compliance with EU RoHS 2002/95/EC directives
APPLICATIONS
• Case: SOD-523 plastic • Terminals : Solderable per MIL-STD-750,Method 2026 • Approx We |  Pan Jit International | data |
| 3 | 1SS388 | High Speed Switching Diode 1SS388
High Speed Switching Diode
SOD-523
Features
Low forward voltage. Low reverse current. Small package.
Applications
High-speed switching in surface mounted circuits.
Dimensions in inches and (millimeters)
Ordering Information
Type No. 1SS388
Marking S3
Package Code SOD-523
MAX |  LGE | diode |
| 4 | 1SS388 | Switching Diode MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
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1SS388
Features
• High speed switching diode • Surface mount package
• For general purpose switching applications
• Marking: S3 • Epoxy |  MCC | diode |
| 5 | 1SS388 | SCHOTTKY BARRIER DIODE JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-523 Plastic-Encapsulate Diodes
1SS388 SCHOTTKY BARRIER DIODE
FEATURES z Small pacakage z Low forward voltage z Low reverse current
SOD-523
MARKING: S3
The marking bar indicates the cathode Solid dot = Green molding compound device,if none,
t |  JCET | diode |
1SS Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1SS104 | SILICON PLANAR TYPE DIODE Toshiba Semiconductor diode | | |
| 2 | 1SS106 | SILICON SCHOTTKY BARRIER DIODE 1SS106
SILICON SCHOTTKY BARRIER DIODE
for various detector, high speed switching
Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal.
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Reverse Voltage Average Forward Current Junction T SEMTECH diode | | |
| 3 | 1SS106 | Silicon Schottky Barrier Diode 1SS106
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
REJ03G0125-0200Z (Previous: ADE-208-153A)
Rev.2.00 Oct.23.2003
Features
• Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal..
Ordering Information
Type No. 1S  Renesas diode | | |
| 4 | 1SS106 | SMALL SIGNAL SCHOTTKY DIODES R SEMICONDUCTOR
1SS106
SMALL SIGNAL SCHOTTKY DIODES
FEATURES
Detection effciency is very good Small temperature coefficient High reliability with glass seal For use in RECORDER, TV, RADIO, TELEPHONE as detectors, super high speed switching circuits small current rectifier High temperature solderi  JINAN JINGHENG ELECTRONICS diode | | |
| 5 | 1SS106 | Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching 1SS106
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
ADE-208-153A (Z) Rev. 1 Oct. 1998 Features
• Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal.
Ordering Information
Type No. 1SS106 Cathode White 2nd band Wh  Hitachi Semiconductor diode | | |
| 6 | 1SS108 | Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching 1SS108
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
ADE-208-154A (Z) Rev. 1 Features
• Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal.
Ordering Information
Type No. 1SS108 Cathode White 2nd band Black Mark H Hitachi Semiconductor diode | | |
| 7 | 1SS110 | Silicon Epitaxial Planar Diode for Tuner Band Switch 1SS110
Silicon Epitaxial Planar Diode for Tuner Band Switch
ADE-208-179B (Z) Rev. 2 Features
• Low forward resistance. (r f = 0.9 Ω max) • Suitable for 5mm pitch high speed automatical insertion. • Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
T Hitachi Semiconductor diode | |
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