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PDF 1SS368 Data sheet ( Hoja de datos )
| Número de pieza | 1SS368 | |
| Descripción | SILICON EPITAXIAL PLANAR DIODE | |
| Fabricantes | SEMTECH | |
| Logotipo |  |
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1SS368
SILICON EPITAXIAL PLANAR DIODE
Ultra High Speed Switching Application
Features
• Small package
• Low forward voltage:
VF=0.98V (typ.)
• Fast reverse recovery time:
trr=1.6ns (typ.)
• Small total capacitance:
CT=0.5pF (typ.)
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
12
W8
Top View
Marking Code: "W8"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (T j = 25? )
Parameter
Symbol
Value
Maximum (peak) Reverse Voltage
VRM 85
Reverse Voltage
VR 80
Maximum (peak) Forward Current
IFM 200
Average Forward Current
IO 100
Surge Current (10ms)
Power Dissipation
IFSM
Ptot
1
1501)
Junction Temperature
TJ 125
Storage Temperature Range
Ts -55 to +125
1) Mounted on a glass epoxy circuit board of 20x20mm, pad dimension of 4x4mm.
Unit
V
V
mA
mA
A
mW
?
?
Characteristics at T j = 25 ?
Parameter
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
Test Conditions
IF = 1mA
IF = 10mA
IF = 100mA
VR = 30V
VR = 80V
f = 1MHZ
IF = 10mA
Symbol
VF
VF
VF
IR
IR
CT
trr
Min
-
-
-
-
-
-
-
Typ
0.62
0.75
0.98
-
-
0.5
1.6
Max
-
-
1.20
0.1
0.5
3.0
4.0
Unit
V
V
V
µA
µA
pF
ns
РАДИОТЕХ-ТРЕЙД
Тел.: (495) 795-0805
Факс: (495) 234-1603
Эл. почта: [email protected]
Веб: www.rct.ru
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