(PDF) MDD1903 Datasheet - Single N-channel Trench MOSFET

Número de pieza	MDD1903
Descripción	Single N-channel Trench MOSFET
Fabricantes	MagnaChip
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No Preview Available ! Preliminary – Subject to change without notice MDD1903 Single N-channel Trench MOSFET 100V, 11A, 120mΩ General Description The MDD1903 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1903 is suitable device for DC/DC Converters and general purpose applications. Features  VDS = 100V  ID = 11A @VGS = 10V  RDS(ON) < 120mΩ @VGS = 10V < 135mΩ @VGS = 6.0V D G Absolute Maximum Ratings (Tc = 25oC) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Characteristics Pulsed Drain Current Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (1) TC=25oC TC=100oC TC=25oC TC=100oC S Symbol VDSS VGSS ID IDM PD TJ, Tstg Rating 100 ±20 11 7.3 30 39 15 -55~150 Unit V V A A A W oC Symbol RθJA RθJC Rating 52 3.2 Unit oC/W Jan. 2011. Version 2.0 1 MagnaChip Semiconductor Ltd. 1 page

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PDF MDD1903 Data sheet ( Hoja de datos )