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Número de pieza | AON7934 | |
Descripción | 30V Dual Asymmetric N-Channel AlphaMOS | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AON7934 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! AON7934
30V Dual Asymmetric N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
Q1
30V
16A
<10.2mΩ
<15.8mΩ
Q2
30V
18A
<7.7mΩ
<11.6mΩ
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested
100% Rg Tested
Power DFN3x3A
Top View
Bottom View
G2
S2
S2
S2
(S1/D2)
D1
Top View
Bottom View
D1 G1
D1
D1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche Energy L=0.05mH C
IDSM
IAS
EAS
VDS Spike
100ns
VSPIKE
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Max Q1
Max Q2
30
±20 ±20
16 18
12 14
64 72
13 15
7.8 9
19 25
3.0 4.1
36 36
23 25
9 10
2.5 2.5
0.9 0.9
-55 to 150
Units
V
V
A
A
A
mJ
V
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ Q1
40
70
4.5
Max Q1
50
90
5.4
Typ Q2
40
70
4.2
Max Q2
50
90
5
Units
°C/W
°C/W
°C/W
Rev0 : April 2012
www.aosmd.com
Page 1 of 10
1 page AON7934
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30 40
25
30
20
15 20
10
5
0
0
25 50 75 100 125
TCASE (°C)
Figure 12: Power De-rating (Note F)
150
10
0
0 25 50 75 100 125
TCASE (°C)
Figure 13: Current De-rating (Note F)
150
10000
1000
TA=25°C
100
10
1
0.00001
0.001
0.1
10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
1000
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
Single Pulse
PD
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10 100 1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: April 2012
www.aosmd.com
Page 5 of 10
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet AON7934.PDF ] |
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