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What is AON7902?

This electronic component, produced by the manufacturer "Alpha & Omega Semiconductors", performs the same function as "30V Dual Asymmetric N-Channel MOSFET".


AON7902 Datasheet PDF - Alpha & Omega Semiconductors

Part Number AON7902
Description 30V Dual Asymmetric N-Channel MOSFET
Manufacturers Alpha & Omega Semiconductors 
Logo Alpha & Omega Semiconductors Logo 


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AON7902
30V Dual Asymmetric N-Channel MOSFET
General Description
Product Summary
The AON7902 is designed to provide a high efficiency
synchronous buck power stage with optimal layout and
board space utilization. It includes two specialized
MOSFETs in a dual Power DFN3.3x3.3A package. The Q1
"High Side" MOSFET is designed to minimize switching
losses. The Q2 "Low Side" MOSFET use advance trench
technology with a monolithically integrated Schotty to
provide excellent RDS(ON) and low gate charge. The
AON7902 is well suited for use in compact DC/DC
converter applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Q1
30V
27A
<21m
<28m
Q2
30V
40A
<6.2m
<7.4m
Top View
DFN3.3X3.3A
Bottom View
PIN1
PIN1
PIN1
Top View
Bottom View
8
G2
S2 7
6
S2
S2 5
D2/S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche Energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Max Q1
Max Q2
30
±20 ±12
24 40
15 31
90 150
8 13
6 10
22 36
24 65
17 50
7 20
1.8 1.8
1.1 1.1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ Q1
27
60
6
Typ Q2
27
60
2
Max Q1
35
72
7.5
Max Q2
35
72
2.5
1
G1
2
D1
3 D1
4 D1
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: Jan 2011
www.aosmd.com
Page 1 of 11

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AON7902 equivalent
AON7902
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100.0
20
TA=25°C
TA=150°C
TA=100°C
TA=125°C
15
10
5
10.0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
0
0 25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note F)
30
25
20
15
10
5
0
0 25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note F)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=72°C/W
10000
1000
100
10
TA=25°C
17
5
2
10
1
0.00001 0.001
0.1
10 01000
Pulse Width (s) 18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.00001
PD
Single Pulse
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 0: Jan 2011
www.aosmd.com
Page 5 of 11


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Part Details

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