FAN73611MX Datasheet PDF - Fairchild Semiconductor
| Part Number | FAN73611MX | |
| Description | Single-Channel High-Side Gate Drive IC | |
| Manufacturers | Fairchild Semiconductor | |
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There is a preview and FAN73611MX download ( pdf file ) link at the bottom of this page. Total 13 Pages | ||
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July 2010
FAN73611
Single-Channel High-Side Gate Drive IC
Features
Floating Channel for Bootstrap Operation to +600V
250mA/500mA Sourcing/Sinking Current Driving
Capability
Common-Mode dv/dt Noise-Canceling Circuit
3.3V and 5V Input Logic Compatible
Output In Phase with Input Signal
Under-Voltage Lockout for VDD and VBS
8-Lead Small Outline Package (SOP)
Applications
High-Speed Gate Driver
Plasma Display Panel
Switching-Mode Power Supply (SMPS)
Motor Drive Inverter
Description
The FAN73611 is a monolithic high-side gate drive IC
that can drive MOSFETs and IGBTs operating up to
+600V. Fairchild’s high-voltage process and common-
mode noise canceling techniques provide stable opera-
tion of the high-side driver under high dv/dt noise circum-
stances. An advanced level-shift circuit offers high-side
gate driver operation up to VS=-9.8V (typical) for
VBS=15V. The UVLO circuits prevents malfunction when
VDD or VBS is lower than the specified threshold voltage.
The output drivers typically source/sink 250mA/500mA;
respectively, which is suitable for Plasma Display Panel
(PDP) application, motor drive inverter, and switching
mode power supply applications.
8-SOP
Ordering Information
Part Number
FAN73611M(1)
FAN73611MX(1)
Package
8-Lead, Small-Outline Package (SOP)
Note:
1. These devices passed wave soldering test by JESD22A-111.
Operating
Temperature Range
-40°C ~ 125°C
Packing Method
Tube
Tape & Reel
© 2010 Fairchild Semiconductor Corporation
FAN73611 • Rev. 1.0.0
www.fairchildsemi.com
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Electrical Characteristics
VBIAS(VDD, VBS) = 15.0V and TA = 25°C unless otherwise specified. The VIN and IIN parameters are referenced to
GND. The VO and IO parameters are relative to VS and are applicable to the respective output HO.
Symbol
Characteristics
Test Condition
Min. Typ. Max. Unit
Power Supply Section
IQDD
IPDD
Quiescent VDD Supply Current
Operating VDD Supply Current
VIN=0V or 5V, CLOAD=1000pF
CLOAD=1000pF, fIN=20KHz,
RMS value
80 140 A
80 160 A
VDDUV+
VBSUV+
VDD and VBS Supply Under-Voltage Positive
Going Threshold Voltage
VDD=Sweep, VBS=Sweep
VDDUV- VDD and VBS Supply Under-Voltage Nega-
VBSUV- tive Going Threshold Voltage
VDD=Sweep, VBS=Sweep
VDDHYS
VBSHYS
VDD and VBS Supply Under-Voltage Lockout
Hysteresis Voltage
VDD=Sweep, VBS=Sweep
ILK Offset Supply Leakage Current
VB=VS=600V
IQBS Quiescent VBS Supply Current
VIN=0V or 5V, CLOAD=1000pF
IPBS Operating VBS Supply Current
CLOAD=1000pF, fIN=20KHz,
RMS Value
7.8 8.8 9.8 V
7.3 8.3 9.3 V
0.5 V
10 A
60 100 A
420 600 A
Input Logic Section
VIH Logic “1” Input Voltage
VIL Logic “0” Input Voltage
IIN+ Logic Input High Bias Current
IIN- Logic Input Low Bias Current
RIN Input Pull-Down Resistance
Gate Driver Output Section
VIN=5V
VIN=0V
2.5 V
0.8 V
50 75 A
2 A
60 100
K
VOH High Level Output Voltage (VBIAS - VO)
No Load
VOL Low Level Output Voltage
No Load
IO+ Output High, Short-Circuit Pulsed Current VHO=0V, VIN=5V, PW 10µs
IO- Output Low, Short-Circuit Pulsed Current VHO=15V,VIN=0V, PW 10µs
VS
Allowable Negative VS Pin Voltage for IN
Signal Propagation to HO
VBS=15V
0.1 V
0.1 V
200 250
mA
400 500
mA
-9.8 -7.0 V
Dynamic Electrical Characteristics
VDD=VBS=15V, CLOAD=1000pF, and TA=25°C, unless otherwise specified.
Symbol
Parameter
Conditions
ton Turn-On Propagation Delay Time
toff Turn-Off Propagation Delay Time
tr Turn-On Rise Time
tf Turn-Off Fall Time
VS=0V
VS=0V
.
© 2010 Fairchild Semiconductor Corporation
FAN73611 • Rev. 1.0.0
5
Min.
70
70
Typ.
120
120
70
30
Max.
170
170
140
60
Unit
ns
ns
ns
ns
www.fairchildsemi.com
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| Information | Total 13 Pages | |
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