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PDF SKM100GAR123D Data sheet ( Hoja de datos )
| Número de pieza | SKM100GAR123D | |
| Descripción | IGBT Modules | |
| Fabricantes | Semikron | |
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Absolute Maximum Ratings
Symbol Conditions 1)
VCES
VCGR
IC
ICM
VGES
Ptot
Tj, (Tstg)
Visol
humidity
climate
RGE = 20 kΩ
Tcase = 25/80 °C
Tcase = 25/80 °C; tp = 1 ms
per IGBT, Tcase = 25 °C
AC, 1 min.
DIN 40 040
DIN IEC 68 T.1
Inverse Diode
IF= – IC
Tcase = 25/80 °C
IFM= – ICM Tcase = 25/80 °C; tp = 1 ms
IFSM tp = 10 ms; sin.; Tj = 150 °C
I2t tp = 10 ms; Tj = 150 °C
Values
1200
1200
100 / 90
200 / 180
± 20
690
– 40 . . .+150 (125)
2 500 7)
Class F
40/125/56
FWD 6)
95 / 65
130 / 90
200 / 180 200 / 180
720 1100
2600
6000
Units
V
V
A
A
V
W
°C
V
A
A
A
A2s
Characteristics
Symbol Conditions 1)
V(BR)CES
VGE(th)
ICES
IGES
VCEsat
VCEsat
gfs
VGE = 0, IC = 4 mA
VGE = VCE, IC = 2 mA
VGE
VCE
=
=
0
VCES
Tj
Tj
=
=
25
125
°C
°C
VGE = 20 V, VCE = 0
IC
IC
=
=
75
100
AA
VGE
Tj =
= 15 V;
25 (125)
°C
VCE = 20 V, IC = 75 A
CCHC
Cies
Coes
Cres
LCE
per IGBT
VGE = 0
VCE = 25 V
f = 1 MHz
td(on)
tr
td(off)
tf
Eon 5)
Eoff 5)
VCC = 600 V
VGE = +15 V, - 15 V3)
IC = 75 A, ind. load
RGon = RGoff = 15 Ω
Tj = 125 °C
Inverse Diode 8)
VF = VEC
VF = VEC
IF =
75
A
VGE
=
0
V;
IF = 100 A Tj = 25 (125) °C
VTO Tj = 125 °C
rT
IRRM
Qrr
Tj = 125 °C
IF = 75 A; Tj = 25 (125) °C2)
IF = 75 A; Tj = 25 (125) °C2)
FWD of types “GAL”, “GAR” 8)
VF = VEC
VF = VEC
IF
IF
=
=
75
100
A
A
VGE
Tj =
= 0 V;
25 (125)
°C
VTO Tj = 125 °C
rT
IRRM
Qrr
Tj = 125 °C
IF = 75 A; Tj = 25 (125) °C2)
IF = 75 A; Tj = 25 (125) °C2)
Thermal Characteristics
Rthjc
per IGBT
Rthjc per diode / FWD “GAL; GAR”
Rthch
per module
min.
≥ VCES
4,5
–
–
–
–
–
31
–
–
–
–
–
–
–
–
–
–
–
typ.
–
5,5
0,1
6
–
2,5(3,1)
2,8(3,6)
–
–
5
720
380
–
30
70
450
70
10
8
max.
–
6,5
1,5
–
300
3(3,7)
–
–
350
6,6
900
500
30
60
140
600
90
–
–
– 2,0(1,8) 2,5
– 2,25(2,05) –
– – 1,2
– 12 15
– 27(40) –
– 3(10) –
– 1,85(1,6) 2,2
– 2,0(1,8) –
– – 1,2
– 9 11
– 30(45) –
– 3,5(11) –
– – 0,18
– – 0,50/0,36
– – 0,05
Units
V
V
mA
mA
nA
V
V
S
pF
nF
pF
pF
nH
ns
ns
ns
ns
mWs
mWs
V
V
V
mΩ
A
µC
V
V
V
mΩ
A
µC
°C/W
°C/W
°C/W
SEMITRANS® M
IGBT Modules
SKM 100 GB 123 D
SKM 100 GAL 123 D 6)
SKM 100 GAR 123 D 6)
SEMITRANS 2
6)
6)
GB
GAL
GAR
Features
• MOS input (voltage controlled)
• N channel, Homogeneous Si
• Low inductance case
• Very low tail current with low
temperature dependence
• High short circuit capability,
self limiting to 6 * Icnom
• Latch-up free
• Fast & soft inverse CAL
diodes8)
• Isolated copper baseplate
using DCB Direct Copper Bon-
ding Technology
• Large clearance (10 mm) and
creepage distances (20 mm).
Typical Applications: → B 6 -115
• Switching (not for linear use)
1) Tcase = 25 °C, unless otherwise
specified
2) IF = – IC, VR = 600 V,
– diF/dt = 800 A/µs, VGE = 0 V
3) Use VGEoff = -5 ... -15 V
5) See fig. 2 + 3; RGoff = 15 Ω
6) The free-wheeling diodes of the
GAL and GAR types have the
data of the inverse diodes of
SKM 150 GB 123 D
7) Visol = 4000 Vrms on request
8) CAL = Controlled Axial Lifetime
Technology.
Cases and mech. data → B6-116
© by SEMIKRON
0898
B 6 – 111
1 page  
© by SEMIKRON
0796
B 6 – 115
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SKM100GAR123D.PDF ] | |
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