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2SD1861 PDF Datasheet - Power transistor - Rohm

Part Number 2SD1861
Description Power transistor
Manufacturers Rohm 
Logo Rohm Logo 
Preview
Preview ( 3 pages )
		
2SD1861 datasheet, circuit
Transistors
Power transistor (40V, 2A)
2SD1759 / 2SD1861
2SD1759 / 2SD1861
zFeatures
1) Darlington connection for high DC current gain.
2) Built-in 4kresistor between base and emitter.
3) Complements the 2SB1183 / 2SB1239.
zEquivalent circuit
C
B
RBE 4k
C : Collector
B : Base
E : Emitter
E
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
2SD1861
2SD1759
Symbol
VCBO
VCER
VEBO
IC
PC
Junction temperature
Tj
Storage temperature
Tstg
Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
Limits
40
40
5
2
1
1
10
150
55 to +150
Unit
V
V(RBE=10k)
V
A(DC)
W
W(TC=25°C)
°C
°C
zPackaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SD1759
CPT3
1k to 200k
TL
2500
2SD1861
ATV
1k to
TV2
2500
zExternal dimensions (Unit : mm)
2SD1759
5.5 1.5
0.9
C0.5
0.8Min.
1.5
2.5
9.5
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
2SD1861
6.8
2.5
0.65Max.
0.5
(1) (2) (3)
2.54 2.54
1.05 0.45
Taping specifications
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
2SD1759
2SD1861
Transition frequency
Output capacitance
Symbol
BVCBO
BVCER
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
40
40
5
1000
1000
Typ.
0.8
150
11
Max.
1
1
1.5
20000
Unit
V
V
V
µA
µA
V
MHz
pF
Conditions
IC=50µA
IC=1mA , RBE=10k
IE=50µA
VCB=24V
VEB=4V
IC/IB=0.6A/1.2mA
VCE/IC=3V/0.5A
VCE=6V , IE= −0.1A , f=100MHz
VCB=10V , IE=0A , f=1MHz
Rev.A
1/2

1 page
line_dark_gray
2SD1861 pdf, schematic
Transistors
2SD1759 / 2SD1861
zElectrical characteristics curves
1.0
Ta=25°C
0.8
100µA 90µA
80µA
70µA
60µA
0.6 50µA
40µA
0.4 30µA
20µA
0.2 10µA
0 IB= 0µA
0 12 34 5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
2000
Ta=25°C
1000 VCE= 3V
500
200
100
50
20
10
5
2
1
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagation characteristics
Ta=25°C
50000
20000 VCE=3V
10000
5000 1V
2000
1 2 5 10 20 50 100 200 500 1000 2000 5000
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain vs. collector current
Ta=25°C
5.0 IC/IB=1000
2.0
1.0
0.5
0.2
1 2 5 10 20 50 100 200 500 1000 2000
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current
50
f=1MHz
IC=0A
Ta=25°C
20
10
5
2
1
0.1 0.2 0.5 1 2
5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.5 Colletor output capacitance
vs. collector-base voltage
50
f=1MHz
IC=0A
Ta=25°C
20
10
5
2
1
0.1 0.2 0.5 1 2
5 10 20 50 100
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.6 Emitter input capacitance
vs. emitter-base voltage
Rev.A
2/2

2 Page





Information Total 3 Pages
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