(PDF) D2562 Datasheet - NPN Transistor

Número de pieza	D2562
Descripción	NPN Transistor - 2SD2562
Fabricantes	Inchange Semiconductor
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No Preview Available ! INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD2562 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 10A, VCE= 4V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 10A, IB=B 10mA) ·Complement to Type 2SB1649 APPLICATIONS ·Designed for series regulator and general purpose applications. .iscsemi.cnABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT wwwVCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 15 A IB Base Current-Continuous Collector Power Dissipation PC @TC=25℃ TJ Junction Temperature Tstg Storage Temperature 1A 85 W 150 ℃ -55~150 ℃ isc Website：www.iscsemi.cn www.DataSheet.in 1 page

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PDF D2562 Data sheet ( Hoja de datos )