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Datasheet FGA50N100BNT Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | FGA50N100BNT | 50A NPT-Trench IGBT CO-PAK FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK
March 2009
FGA50N100BNT
1000V, 50A NPT-Trench IGBT CO-PAK
tm
Features
• High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A • High Input Impedance • RoHS Compliant
Applications
• UPS, PFC, I-H Jar, Induction Heater, | Fairchild Semiconductor | igbt |
2 | FGA50N100BNTD | IGBT, Insulated Gate Bipolar Transistor FGA50N100BNTD — 1000 V NPT Trench IGBT
November 2013
FGA50N100BNTD
1000 V NPT Trench IGBT
General Description
Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy par | Fairchild Semiconductor | igbt |
3 | FGA50N100BNTD2 | IGBT, Insulated Gate Bipolar Transistor FGA50N100BNTD2 — 1000 V NPT Trench IGBT
FGA50N100BNTD2
1000 V NPT Trench IGBT
Features
• High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60 A • High Input Impedance • Built-in Fast Recovery Diode • RoHS Compliant
Applications
• UPS, Welder
November 2013
Genera | Fairchild Semiconductor | igbt |
FGA Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | FGA12-302 | Diode, Rectifier American Microsemiconductor diode | | |
2 | FGA12-502 | Diode, Rectifier American Microsemiconductor diode | | |
3 | FGA120N30D | 300V PDP IGBT
FGA120N30D 300V PDP IGBT
June 2006
FGA120N30D
300V PDP IGBT
Features
• High Current Capability • Low saturation voltage: VCE(sat), Typ = 1.1V@ IC = 25A • High Input Impedance
Description
Employing Unified IGBT Technology, FGA120N30D provides low conduction and switching Fairchild Semiconductor igbt | | |
4 | FGA15N120AN | NPT Igbt FGA15N120AN
IGBT
FGA15N120AN
General Description
Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers solutions for applications such as induction heating (IH), motor control, general purpose inverters and Fairchild Semiconductor igbt | | |
5 | FGA15N120AND | IGBT, Insulated Gate Bipolar Transistor
FGA15N120AND
IGBT
FGA15N120AND
General Description
Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers solutions for applications such as induction heating (IH), motor control, general purpose inverters Fairchild Semiconductor igbt | | |
6 | FGA15N120ANTD | 1200V NPT Trench IGBT
FGA15N120ANTD 1200V NPT Trench IGBT
May 2006
FGA15N120ANTD
1200V NPT Trench IGBT
Features
• NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 1.9V @ IC = 15A and TC = 25°C • Low switching loss: Eoff, typ = 0.6mJ @ IC = 15A Fairchild Semiconductor igbt | | |
7 | FGA15N120ANTDTU | IGBT, Insulated Gate Bipolar Transistor FGA15N120ANTDTU — 1200 V, 15 A NPT Trench IGBT
FGA15N120ANTDTU
1200 V, 15 A NPT Trench IGBT
Features
• NPT Trench Technology, Positive temperature coefficient
• Low Saturation Voltage: VCE(sat), typ = 1.9 V @ IC = 15 A and TC = 25C
• Low Switching Loss: Eoff, typ = 0.6 mJ @ IC = 15 A and Fairchild Semiconductor igbt | |
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Número de pieza | Descripción | Fabricantes | |
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