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PDF Si9926 Data sheet ( Hoja de datos )
| Número de pieza | Si9926 | |
| Descripción | Dual N-Channel Enhancement MOSFET | |
| Fabricantes | Nanxin | |
| Logotipo |  |
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Features
·Low On resistance.
·1.8V drive.
·RoHS compliant.
Si9926 Dual N-Channel Enhancement MOSFET
Si9926
Package Dimensions
Specifications
Absolute Maximum Ratings at Ta=250C
Parameter
Symbol
Drain-to-Source Voltage
VDSS
Gate-to-Source Voltage
VGSS
Drain Current (DC)
ID
Drain Current (Pulse)
IDP
Allowable Power Dissipation
PD
Total Dissipation
PT
Channel Temperature
Tch
Storage Temperature
Tstg
Conditions
PW≤10uS, duty cycle≤1%
Mounted on a ceramic board (1000mm2×0.8mm) 1unit
Mounted on a ceramic board (1000mm2×0.8mm)
Ratings
20
+12
7.6
30
1.3
1.7
150
-55~+150
Unit
V
V
A
A
W
W
0C
0C
Electrical Characteristics at Ta=250C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(ON)
RDS(ON)
RDS(ON)
Ciss
Coss
Crss
Conditions
ID=250uA, VGS=0V
VDS=16V, VGS=0V
VGS=+10V, VDS=0V
VDS= VGS, ID=250uA
ID=7A, VGS=4.5V
ID=6A, VGS=2.5V
ID=2A, VGS=1.8V
VDS=10V, VGS=0V, f=1MHz
VDS=10V, VGS=0V, f=1MHz
VDS=10V, VGS=0V, f=1MHz
Ratings
min typ max
20
1
+100
0.5 0.8 1.0
21 26
27 34
38 52
630
164
137
Unit
V
uA
nA
V
mΩ
mΩ
mΩ
pF
pF
pF
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet Si9926.PDF ] | |
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