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PDF B60NH02L Data sheet ( Hoja de datos )
| Número de pieza | B60NH02L | |
| Descripción | STB60NH02L | |
| Fabricantes | STMicroelectronics | |
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STB60NH02L
N-CHANNEL 24V - 0.0085 Ω - 60A D²PAK
STripFET™ III POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STB60NH02L
24 V < 0.0105 Ω 60 A
■ TYPICAL RDS(on) = 0.0085 Ω @ 10 V
■ TYPICAL RDS(on) = 0.012 Ω @ 5 V
)■ RDS(ON) * Qg INDUSTRY’s BENCHMARK
t(s■ CONDUCTION LOSSES REDUCED
c■ SWITCHING LOSSES REDUCED
u■ LOW THRESHOLD DEVICE
rod■ SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
PIN TAPE & REEL (SUFFIX “T4”)
leteDESCRIPTION
oThe STB60NH02L utilizes the latest advanced design
srules of ST’s proprietary STripFET™ technology. This is
bsuitable fot the most demanding DC-DC converter
application where high efficiency is to be achieved.
) - OAPPLICATIONS
t(s■ SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
3
1
D2PAK
TO-263
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
te ProducOrdering Information
leSALES TYPE
oSTB60NH02LT4
MARKING
B60NH02L
ObsABSOLUTE MAXIMUM RATINGS
PACKAGE
TO-263
PACKAGING
TAPE & REEL
Symbol
Parameter
Value
Unit
Vspike(1) Drain-source Voltage Rating
30 V
VDS Drain-source Voltage (VGS = 0)
24 V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
24 V
VGS Gate- source Voltage
± 20
V
ID Drain Current (continuous) at TC = 25°C
60
A
ID Drain Current (continuous) at TC = 100°C
43
A
IDM(2)
Drain Current (pulsed)
240 A
Ptot Total Dissipation at TC = 25°C
70 W
Derating Factor
0.47 W/°C
EAS (3) Single Pulse Avalanche Energy
280 mJ
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
-55 to 175
°C
May 2004
1/11
1 page  
STB60NH02L
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
roduct(s)Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature
Obsolete Product(s) - Obsolete P. .
5/11
5 Page 
STB60NH02L
Obsolete Product(s) - Obsolete Product(s)
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
All other names are the property of their respective owners.
© 2004 STMicroelectronics - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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