|
|
Número de pieza | TPC8032-H | |
Descripción | Silicon N-Channel MOS Type Field Effect Transistor | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TPC8032-H (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! TPC8032-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H)
TPC8032-H
High-Efficiency DC/DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: QSW = 8.4 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 5.0 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 60 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
30
30
±20
15
60
1.9
1.0
146
15
0.12
150
−55 to 150
Note 1, Note 2, Note 3 and Note 4: See the next page.
Unit
V
V
V
A
W
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.085 g (typ.)
Circuit Configuration
8765
1234
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Downloaded from Elcodis.com electronic components distributor
1
2007-12-25
1 page RDS (ON) – Ta
16
Common source
Pulse test
12
ID = 3.8A,7.5A,15A
8
VGS = 4.5 V
4
VGS = 10 V
ID = 3.8A,7.5A,15A
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPC8032-H
IDR – VDS
100
10
10
4.5
3
1
Common source
VGS = 0 V
Ta = 25°C
Pulse test
1
−0 −0.2 −0.4 −0.6 −0.8 −1
Drain-source voltage VDS (V)
10000
Capacitance – VDS
Ciss
1000
Coss
100
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Crss
10
0.1 1 10
Drain-source voltage VDS (V)
100
Vth – Ta
3
2.5
2
1.5
1
Common source
0.5
VDS = 10 V
ID = 1 mA
Pulse test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
2
(1)
1.6
1.2
(2)
0.8
PD – Ta
(1)Device mounted on a glass-epoxy
board(a) (Note 2a)
(2)Device mounted on a glass-epoxy
board(b) (Note 2b)
t =10s
0.4
0
0 40 80 120 160
Ambient temperature Ta (°C)
Dynamic input/output
characteristics
50
Common source
ID = 15 A
40 Ta = 25°C
Pulse test
30
VDS
20
10
VDD = 6 V
24 V
12 V
20
16
12
8
4
00
0 8 16 24 32 40
Total gate charge Qg (nC)
Downloaded from Elcodis.com electronic components distributor
5
2007-12-25
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet TPC8032-H.PDF ] |
Número de pieza | Descripción | Fabricantes |
TPC8032-H | Silicon N-Channel MOS Type Field Effect Transistor | Toshiba Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |