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Número de pieza | SGM0410 | |
Descripción | N-Channel Enhancement Mode Power MOSFET | |
Fabricantes | SeCoS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SGM0410 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Elektronische Bauelemente
SGM0410
3.5A , 100V , RDS(ON) 170 mΩ
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SGM0410 provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The SOT-89 package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
FEATURES
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
MARKING
0410
= Date code
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
Leader Size
7 inch
SOT-89
A
Top View C B
KL
E
123
D
F GH
4
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40 4.60
4.05 4.25
2.40 2.60
1.40 1.60
3.00 REF.
0.40 0.52
REF.
G
H
J
K
L
Millimeter
Min. Max.
--
0.89 1.20
0.35 0.41
0.70 0.80
1.50 REF.
D
24
1
G
3
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous DrainCurrent3@
Pulsed Drain Current1,2
VGS=5V, TA=25°C
VGS=5V, TA=70°C
ID
IDM
Power Dissipation
TA=25°C
PD
Linear Derating Factor
Operating Junction & Storage Temperature
TJ, TSTG
Thermal Resistance Rating
Thermal Resistance Junction-Ambient3(Max).
RθJA
Rating
100
±20
3.5
2.2
10
2
0.016
-55~150
62.5
Unit
V
V
A
A
A
W
W / °C
°C
°C / W
http://www.SeCoSGmbH.com/
3-Nov-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet SGM0410.PDF ] |
Número de pieza | Descripción | Fabricantes |
SGM0410 | N-Channel Enhancement Mode Power MOSFET | SeCoS |
SGM0410S | N-Channel Enhancement Mode Power MOSFET | SeCoS |
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